Hyungjin Kim
Hyungjin Kim
Department of Electronic Engineering, Inha University
Verified email at - Homepage
Cited by
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Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits
M Prezioso, MR Mahmoodi, FM Bayat, H Nili, H Kim, A Vincent, ...
Nature communications 9 (1), 1-8, 2018
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
Silicon-based Floating-body Synaptic Transistor with Frequency Dependent Short-and Long-Term Memories
H Kim, J Park, MW Kwon, JH Lee, BG Park
IEEE Electron Device Letters 37 (3), 249-252, 2016
Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system
H Kim, S Hwang, J Park, BG Park
Nanotechnology 28 (40), 405202, 2017
Spiking neural network using synaptic transistors and neuron circuits for pattern recognition with noisy images
H Kim, S Hwang, J Park, S Yun, JH Lee, BG Park
IEEE Electron Device Letters 39 (4), 630-633, 2018
4K-memristor analog-grade passive crossbar circuit
H Kim, MR Mahmoodi, H Nili, DB Strukov
Nature Communications 12 (1), 1-11, 2021
Compact neuromorphic system with four-terminal Si-based synaptic devices for spiking neural networks
J Park, MW Kwon, H Kim, S Hwang, JJ Lee, BG Park
IEEE Transactions on Electron Devices 64 (5), 2438-2444, 2017
3-D floating-gate synapse array with spike-time-dependent plasticity
HS Choi, DH Wee, H Kim, S Kim, KC Ryoo, BG Park, Y Kim
IEEE Transactions on Electron Devices 65 (1), 101-107, 2017
System-level simulation of hardware spiking neural network based on synaptic transistors and I&F neuron circuits
S Hwang, H Kim, J Park, MW Kwon, MH Baek, JJ Lee, BG Park
IEEE Electron Device Letters 39 (9), 1441-1444, 2018
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
TH Kim, H Nili, MH Kim, KK Min, BG Park, H Kim
Applied Physics Letters 117 (15), 152103, 2020
Towards the development of analog neuromorphic chip prototype with 2.4 m integrated memristors
I Kataeva, S Ohtsuka, H Nili, H Kim, Y Isobe, K Yako, D Strukov
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019
An analog neuro-optimizer with adaptable annealing based on 64× 64 0T1R crossbar circuit
MR Mahmoodi, H Kim, Z Fahimi, H Nili, L Sedov, V Polishchuk, ...
2019 IEEE International Electron Devices Meeting (IEDM), 14.7. 1-14.7. 4, 2019
Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications
S Kim, H Kim, S Jung, MH Kim, SH Lee, S Cho, BG Park
Journal of Alloys and Compounds 663, 419-423, 2016
Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology
MC Sun, G Kim, JH Lee, H Kim, SW Kim, HW Kim, JH Lee, H Shin, ...
Microelectronic engineering 110, 141-146, 2013
Integrate-and-fire (I&F) neuron circuit using resistive-switching random access memory (RRAM)
MW Kwon, S Kim, MH Kim, J Park, H Kim, S Hwang, BG Park
Journal of Nanoscience and Nanotechnology 17 (5), 3038-3041, 2017
Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
S Kim, TH Kim, H Kim, BG Park
Applied Physics Letters 117 (20), 202106, 2020
Synaptic semiconductor device and operation method thereof
B Park, H Kim, KIM Garam, JH Lee, K Min-Woo
US Patent 9,165,242, 2015
Integrated neuron circuit for implementing neuromorphic system with synaptic device
JJ Lee, J Park, MW Kwon, S Hwang, H Kim, BG Park
Solid-State Electronics 140, 34-40, 2018
Simulation study on silicon-based floating body synaptic transistor with short-and long-term memory functions and its spike timing-dependent plasticity
H Kim, S Cho, MC Sun, J Park, S Hwang, BG Park
JSTS: Journal of Semiconductor Technology and Science 16 (5), 657-663, 2016
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