Distinctive finite size effects on the phase diagram and metal–insulator transitions of tungsten-doped vanadium (iv) oxide L Whittaker, TL Wu, CJ Patridge, G Sambandamurthy, S Banerjee Journal of Materials Chemistry 21 (15), 5580-5592, 2011 | 154 | 2011 |
Temperature and voltage driven tunable metal-insulator transition in individual VO nanowires TL Wu, L Whittaker, S Banerjee, G Sambandamurthy Physical Review B 83 (7), 073101, 2011 | 78 | 2011 |
Single-Nanowire Raman Microprobe Studies of Doping-, Temperature-, and Voltage-Induced Metal–Insulator Transitions of WxV1–xO2 Nanowires L Whittaker, TL Wu, A Stabile, G Sambandamurthy, S Banerjee ACS nano 5 (11), 8861-8867, 2011 | 51 | 2011 |
Synthesis, Spectroscopic Characterization, and Observation of Massive Metal Insulator Transitions in Nanowires of a Nonstoichiometric Vanadium Oxide Bronze CJ Patridge, TL Wu, C Jaye, B Ravel, ES Takeuchi, DA Fischer, ... Nano letters 10 (7), 2448-2453, 2010 | 51 | 2010 |
High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport C Thomas, AT Hatke, A Tuaz, R Kallaher, T Wu, T Wang, RE Diaz, ... Physical review materials 2 (10), 104602, 2018 | 41 | 2018 |
Colossal above-room-temperature metal–insulator switching of a Wadsley-type tunnel bronze CJ Patridge, TL Wu, G Sambandamurthy, S Banerjee Chemical communications 47 (15), 4484-4486, 2011 | 38 | 2011 |
Optical phonons in twisted bilayer graphene with gate-induced asymmetric doping TF Chung, R He, TL Wu, YP Chen Nano Letters 15 (2), 1203-1210, 2015 | 30 | 2015 |
Formation of helical domain walls in the fractional quantum Hall regime as a step toward realization of high-order non-Abelian excitations T Wu, Z Wan, A Kazakov, Y Wang, G Simion, J Liang, KW West, K Baldwin, ... Physical Review B 97 (24), 245304, 2018 | 29 | 2018 |
Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams AA Stabile, SK Singh, TL Wu, L Whittaker, S Banerjee, ... Applied Physics Letters 107 (1), 2015 | 24 | 2015 |
Experimental observation of two massless Dirac-fermion gases in graphene-topological insulator heterostructure G Bian, TF Chung, C Chen, C Liu, TR Chang, T Wu, I Belopolski, H Zheng, ... 2D Materials 3 (2), 021009, 2016 | 23 | 2016 |
Coulomb drag and counterflow Seebeck coefficient in bilayer-graphene double layers J Hu, T Wu, J Tian, NN Klimov, DB Newell, YP Chen Nano Energy 40, 42-48, 2017 | 21 | 2017 |
Synthesis, characterization, and finite size effects on electrical transport of nanoribbons of the charge density wave conductor NbSe3 AA Stabile, L Whittaker, TL Wu, PM Marley, S Banerjee, ... Nanotechnology 22 (48), 485201, 2011 | 21 | 2011 |
Electrically driven metal-insulator switching in δ-KxV2O5 nanowires TL Wu, AA Stabile, CJ Patridge, S Banerjee, G Sambandamurthy Applied Physics Letters 101 (16), 2012 | 15 | 2012 |
Intermediate metallic phase in VO 2 observed with scanning tunneling spectroscopy JB Hatch, L Whittaker-Brooks, TL Wu, G Long, H Zeng, ... Physical Chemistry Chemical Physics 16 (27), 14183-14188, 2014 | 5 | 2014 |
Mobility exceeding 100,000 cm /Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum T Zhang, T Lindemann, GC Gardner, S Gronin, T Wu, MJ Manfra Phys. Rev. Materials 7 (5), 056201, 2023 | 3 | 2023 |
MBE Growth of Thin Hexagonal Films Bi2Te3, Bi2Se3, and Their Alloys on Cubic GaAs (001) Substrates X Liu, YP Chen, DJ Smith, YH Zhang, C Liu, MZ Hasan, M Dobrowolska, ... Bismuth-Containing Compounds, 263-279, 2013 | 2 | 2013 |
Metal-insulator transition in individual nanowires of doped-V2O5 T Wu, CJ Patridge, S Banerjee, G Sambandamurthy APS March Meeting Abstracts 2010, V16. 007, 2010 | 2 | 2010 |
Parafermion supporting platform based on spin transitions in the fractional quantum hall effect regime T Wu, A Kazakov, G Simion, Z Wan, J Liang, KW West, K Baldwin, ... arXiv preprint arXiv:1709.07928, 2017 | 1 | 2017 |
Massive Temperature-Induced Metal—Insulator Transition in Individual Nanowires of a Non-Stoichiometric Vanadium Oxide Bronze C Patridge, T Wu, C Jaye, B Ravel, E Takeuchi, D Fischer, ... Nano Letters 10 (BNL-95897-2011-JA), 2010 | 1 | 2010 |
Mobility exceeding 100,000cm2/Vs in shallow InAs quantum wells T Zhang, T Lindemann, K Premasiri, T Wu, M Manfra APS March Meeting Abstracts 2022, Z65. 010, 2022 | | 2022 |