Koji Watanabe
Koji Watanabe
Tokyo Electron Limited, Japan
Verified email at tel.com
Title
Cited by
Cited by
Year
STM study of the Ge growth mode on Si(001) substrates
M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa
Appl. Surf. Sci., 322-328, 1994
1821994
High-resolution Transmission Electron Microscopy of an Atomic Structure at a Si(001) Oxidation Front
N Ikarashi, K Watanabe
Physical Review B 62, 15989, 2000
592000
Layered heteroepitaxial growth of germanium on Si(015) observed by scanning tunneling microscopy
M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa
Surface Science 301, 214-222, 1994
521994
Quantitative Characterization of Roughness at SiO2/Si Interfaces by Using Cross-sectional High-resolution Transmission Electron Microscopy
N Ikarashi, K Watanabe
Japan Journal of Applied Physics 39, 1278, 2000
282000
1.2nm HfSiON/SiON Stacked Gate Insulators for 65nm-node MISFETs
M Saitoh, N Ikarashi, H Watanabe, S Fujieda, H Watanabe, T Iwamoto, ...
International Conference on Solid State Devices and Materials, 2004
252004
The influence of incorporated nitrogen on the thermal stability of amorphous HfO2 and Hf silicate
N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa, M Miyamura
J. Appl. Phys. 100, 063507, 2006
242006
Effect of Nitrogen Profile and Fluorine Incorporation on Negative-Bias Temperature Instability of Ultrathin Plasma-Nitrided SiON MOSFETs
M Terai, K Watanabe, S Fujieda
IEEE TRANSACTIONS ON ELECTRON DEVICES 54, 1658-1665, 2007
222007
Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals
K Watanabe
Journal of Applied Physics 90, 4701-4707, 2001
222001
Low-Leakage and Highly-Reliable 1.5nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1mm CMOS,
M Togo, K Watanabe, T Yamamoto, N Ikarashi, K Shiba, T Tatsumi, H Ono, ...
Symposium on VLSI Technology, 2000
212000
Thermal stability of a HfO2/SiO2 interface
N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa
Appl. Phys. Lett. 88, 101912, 2006
192006
Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals
K Watanabe
Applied Physics Letters, 2940, 2000
192000
Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals
K Watanabe, M Togo, T Tatsumi
Material Research Society 1999 Fall Meeting, 1999
191999
Atomic structure at a Si-nitrided/Si(001) surfaces
N Ikarashi, K Watanabe, MI Yoshiyuki
Journal of Applied Physics 90, 2683-2688, 2001
14*2001
Electrical Properties of 1.5-nm SiON Gate-Dielectric Using Radical Oxygen and Radical Nitrogen
M Togo, K Watanabe, T Yamamoto, N Ikarashi, T Tatsumi, T Mogami
IEEE Trans on Electron Devices 49, 1903-1909, 2002
132002
Electrical Properties of 1.5-nm SiON Gate-Dielectric Using Radical Oxygen and Radical Nitrogen
M Togo, K Watanabe, T Terai, Masayuki, Yamamoto, ...
IEEE Transaction Electron Devices 49, 1736-1741, 2002
132002
A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices
N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019
122019
TiSi2/Si interface instability in plasma-assisted chemical vapor deposition of titanium
Y Ohshita, K Watanabe
Journal of Crystal Growth 193, 322, 1998
101998
Chemical Reactions in Plasma-Assisted Chemical Vapor Deposition of Titanium
Y Oshita, K Watanabe
Journal of Electrochemical and Solid-state Letters 145, 2558, 1998
101998
Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019
92019
Ultrathin oxide film formation using radical oxygen in an ultrahigh vacuum system
K Watanabe
Japan Journal of Applied Physics, 1055, 1999
91999
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