An analytical estimation model for the spreading resistance of Double-Gate FinFETs CT Malheiro, ASN Pereira, R Giacomini 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 8 | 2012 |
Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques JB Junior, A Pereira, R Buhler, A Perin, C Novo, M Galeti, J Oliveira, ... Microelectronics Journal, 105337, 2021 | 7 | 2021 |
An accurate closed-expression model for FinFETs parasitic resistance ASN Pereira, R Giacomini Microelectronics Reliability 55 (3-4), 470-480, 2015 | 6 | 2015 |
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models ASN Pereira, G de Streel, N Planes, M Haond, R Giacomini, D Flandre, ... Solid-State Electronics 128, 67-71, 2017 | 5 | 2017 |
SOI Stacked Transistors Tolerance to Single-Event Effects AL Perin, ASN Pereira, RT Buhler, MAG da Silveira, RC Giacomini IEEE Transactions on Device and Materials Reliability 19 (2), 393-401, 2019 | 3 | 2019 |
Analysis and modelling of temperature effect on DIBL in UTBB FD SOI MOSFETs ASN Pereira, G de Streel, N Planes, M Haond, R Giacomini, D Flandre, ... 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 3 | 2016 |
A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor AL Perin, ASN Pereira, PG Der Agopian, JA Martino, R Giacomini Journal of Integrated Circuits and Systems 7 (2), 100-106, 2012 | 3 | 2012 |
Comparative analysis of parasitic resistance extraction methods applied to FinFETs FHM Oka, ASN Pereira, RC Giacomini STUDENT FORUMCHIP ON THE MOUNTAINS, 1-4, 2016 | 2 | 2016 |
A New Analytic Model for Double Gate FinFETs Parasitic Resistance ASN Pereira, R Giacomini ECS Transactions 49 (1), 127, 2012 | 2 | 2012 |
Modelo analítico de resistência parasitária para FINFETS de porta dupla ASN Pereira Centro Universitário da FEI, São Bernardo do Campo, 2012 | | 2012 |
A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices AL Perin, AS Pereira, PG Agopian, JA Martino, RC Giacomini ECS Transactions 39 (1), 179, 2011 | | 2011 |
Estudo do fator de corpo para diferentes tecnologias MOS: BULK, PDSOI e FDSOI AG Reimberg, N Merzbahcer, ASN Pereira | | |
STUDY OF SOURCE AND DRAIN GEOMETRY IMPACT ON SERIES RESISTANCE OF TRIPLE GATE FINFETS AS do Nascimento Pereira, PG Der Agopian, R Giacomini | | |
EFEITO DA POLARIZAÇÃO DO SUBSTRATO E DA TEMPERATURA EM TRANSISTORES SOI UTBB GP de Lima, AS do Nascimento Pereira | | |
MODELOS ANALÍTICOS PARA EFEITOS DE CANAL CURTO EM TRANSISTORES DE PORTA DUPLA SIMÉTRICOS E ASSIMÉTRICOS CU FEI, ASDON PEREIRA | | |
Análise Experimental de Métodos de Extração da Resistência Parasitária em FinFETs FHM Oka, ASN Pereira, RC Giacomini | | |
Análise da densidade de carga de inversão em função da temperatura em UTBB SOI MOSFETs N Merzbahcer, A Pereira, R Giacomini | | |
ESTUDO DE MODELOS DE MOBILIDADE PARA A SIMULAÇÃO DE DISPOSITIVOS SOI FINFET D de Oliveira Silva, AS do Nascimento Pereira, R Giacomini | | |
ESTUDO DA RESISTÊNCIA SÉRIE DE FONTE E DRENO EM TRANSISTORES SOI MOSFET COM LDD GAV Rodrigues, AS do Nascimento Pereira, R Giacomini | | |