| Atomic layer deposition of InN using trimethylindium and ammonia plasma P Deminskyi, P Rouf, IG Ivanov, H Pedersen Journal of Vacuum Science & Technology A 37 (2), 2019 | 40 | 2019 |
| In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition NJ O’Brien, P Rouf, R Samii, K Ronnby, SC Buttera, CW Hsu, IG Ivanov, ... Chemistry of Materials 32 (11), 4481-4489, 2020 | 35 | 2020 |
| The endocyclic carbon substituent of guanidinate and amidinate precursors controlling atomic layer deposition of InN films P Rouf, NJ O’Brien, K Rönnby, R Samii, IG Ivanov, L Ojamäe, ... The Journal of Physical Chemistry C 123 (42), 25691-25700, 2019 | 26 | 2019 |
| Epitaxial GaN using Ga (NMe 2) 3 and NH 3 plasma by atomic layer deposition P Rouf, NJ O’Brien, SC Buttera, I Martinovic, B Bakhit, E Martinsson, ... Journal of Materials Chemistry C 8 (25), 8457-8465, 2020 | 22 | 2020 |
| Hexacoordinated gallium (III) triazenide precursor for epitaxial gallium nitride by atomic layer deposition P Rouf, R Samii, K Ronnby, B Bakhit, SC Buttera, I Martinovic, L Ojamae, ... Chemistry of Materials 33 (9), 3266-3275, 2021 | 18 | 2021 |
| Chemical vapor deposition of metallic films using plasma electrons as reducing agents H Nadhom, D Lundin, P Rouf, H Pedersen Journal of Vacuum Science & Technology A 38 (3), 2020 | 15 | 2020 |
| Thermal atomic layer deposition of In 2 O 3 thin films using a homoleptic indium triazenide precursor and water P Mpofu, P Rouf, NJ O'Brien, U Forsberg, H Pedersen Dalton Transactions 51 (12), 4712-4719, 2022 | 12 | 2022 |
| Reduction of carbon impurities in aluminum nitride from time-resolved chemical vapor deposition using trimethylaluminum P Rouf, P Sukkaew, L Ojamäe, H Pedersen The Journal of Physical Chemistry C 124 (26), 14176-14181, 2020 | 12 | 2020 |
| In 0.5 Ga 0.5 N layers by atomic layer deposition P Rouf, J Palisaitis, B Bakhit, NJ O'Brien, H Pedersen Journal of Materials Chemistry C 9 (38), 13077-13080, 2021 | 10 | 2021 |
| Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate H Nadhom, R Boyd, P Rouf, D Lundin, H Pedersen The Journal of Physical Chemistry Letters 12 (17), 4130-4133, 2021 | 9 | 2021 |
| Surface ligand removal in atomic layer deposition of GaN using triethylgallium P Deminskyi, CW Hsu, B Bakhit, P Rouf, H Pedersen Journal of Vacuum Science & Technology A 39 (1), 2021 | 7 | 2021 |
| Methylamines as nitrogen precursors in chemical vapor deposition of gallium nitride K Rönnby, SC Buttera, P Rouf, ST Barry, L Ojamäe, H Pedersen The Journal of Physical Chemistry C 123 (11), 6701-6710, 2019 | 7 | 2019 |
| Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design SC Buttera, P Rouf, P Deminskyi, NJ O’Brien, H Pedersen, ST Barry Inorganic Chemistry 60 (15), 11025-11031, 2021 | 6 | 2021 |
| Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer deposition C Lu, NJ O'Brien, P Rouf, R Dronskowski, H Pedersen, A Slabon Green Chemistry Letters and Reviews 15 (3), 658-670, 2022 | 5 | 2022 |
| Solar-Driven Photoelectrochemical Performance of Novel ZnO/Ag2WO4/AgBr Nanorods-Based Photoelectrodes E Mustafa, RE Adam, P Rouf, M Willander, O Nur Nanoscale Research Letters 16 (1), 133, 2021 | 4 | 2021 |
| Homogeneous high In content InxGa1− x N films by supercycle atomic layer deposition CW Hsu, I Martinovic, R Magnusson, B Bakhit, J Palisaitis, P Persson, ... Journal of Vacuum Science & Technology A 40 (6), 2022 | 3 | 2022 |
| Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents H Nadhom, Y Yuan, P Rouf, N Solin, H Pedersen Journal of Vacuum Science & Technology A 39 (4), 2021 | 1 | 2021 |
| Time-resolved CVD of Group 13-Nitrides P Rouf Linköping University Electronic Press, 2021 | | 2021 |
