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Muhammad Ismail
Muhammad Ismail
Division Electronics and Electronics Engineering, Dongguk University, Seoul- Korea
Verified email at dongguk.edu
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Cited by
Year
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
1022019
Forming-free bipolar resistive switching in nonstoichiometric ceria films
M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ...
Nanoscale research letters 9, 1-8, 2014
992014
Endurance and Cycle-to-cycle Uniformity Improvement in Tri- Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material
KIMYN Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail, Ejaz Ahmad, Fayyaz ...
Scientific Reports 7 (DOI: 10.1038/srep39539), 39539, 2017
942017
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant
M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ...
ACS applied materials & interfaces 8 (9), 6127-6136, 2016
812016
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
M Ismail, H Abbas, C Choi, S Kim
Applied Surface Science 529, 147107, 2020
642020
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
M Ismail, U Chand, C Mahata, J Nebhen, S Kim
Journal of Materials Science & Technology 96, 94-102, 2022
622022
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
MK Rahmani, M Ismail, C Mahata, S Kim
Results in Physics 18, 103325, 2020
622020
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
M Ismail, C Mahata, S Kim
Journal of Alloys and Compounds 892, 162141, 2022
602022
Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering
J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ...
ACS applied materials & interfaces 12 (30), 33908-33916, 2020
512020
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer
M Ismail, H Abbas, C Choi, S Kim
Journal of Alloys and Compounds 835, 155256, 2020
502020
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ...
Applied Surface Science 529, 147167, 2020
492020
Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications
DB Aize Hao, Muhammad Ismail, Shuai He, Ni Qin, Wenhua Huang, Jiang Wu
Journal of Alloys and Compounds 732, 573-584, 2017
48*2017
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing
J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim
ACS Applied Materials & Interfaces 13 (28), 33244-33252, 2021
472021
Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching
M Ismail, MK Rahmani, SA Khan, J Choi, F Hussain, Z Batool, AM Rana, ...
Applied Surface Science 498, 143833, 2019
472019
Zinc tin oxide synaptic device for neuromorphic engineering
JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ...
IEEE Access 8, 130678-130686, 2020
462020
Ag-NPs doping enhanced resistive switching performance and induced changes in magnetic properties of NiFe2O4 thin films
JWDB Aize Hao, Muhammad Ismail, Shuai He, Ni Qin, Wenhua Huang
RSC Advance 7, 46665, 2017
462017
Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
M Ismail, SU Nisa, AM Rana, T Akbar, J Lee, S Kim
Applied Physics Letters 114 (1), 2019
442019
Effect of Gd-Doping on Structural, Optical, and Magnetic Properties of NiFe2O4 As-prepared Thin Films via Facile Sol–Gel Approach
H Yao, X Ning, H Zhao, A Hao, M Ismail
ACS omega 6 (9), 6305-6311, 2021
422021
Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering
JH Ryu, B Kim, F Hussain, C Mahata, M Ismail, Y Kim, S Kim
Applied Surface Science 544, 148796, 2021
412021
Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
M Ismail, Z Batool, K Mahmood, AM Rana, BD Yang, S Kim
Results in Physics 18, 103275, 2020
412020
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