| Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots A Lundskog, CW Hsu, K Fredrik Karlsson, S Amloy, D Nilsson, U Forsberg, ... Light: Science & Applications 3 (1), e139-e139, 2014 | 79 | 2014 |
| Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material D Nilsson, E Janzén, A Kakanakova-Georgieva Journal of Physics D: Applied Physics 49 (17), 175108, 2016 | 72 | 2016 |
| Stable and metastable Si negative-U centers in AlGaN and AlN XT Trinh, D Nilsson, IG Ivanov, E Janzén, A Kakanakova-Georgieva, ... Applied Physics Letters 105 (16), 2014 | 71 | 2014 |
| High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures A Kakanakova-Georgieva, D Nilsson, E Janzén Journal of crystal growth 338 (1), 52-56, 2012 | 59 | 2012 |
| The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN A Kakanakova-Georgieva, D Nilsson, XT Trinh, U Forsberg, NT Son, ... Applied Physics Letters 102 (13), 2013 | 44 | 2013 |
| Electron effective mass in Al0. 72Ga0. 28N alloys determined by mid-infrared optical Hall effect S Schöche, P Kühne, T Hofmann, M Schubert, D Nilsson, ... Applied Physics Letters 103 (21), 2013 | 35 | 2013 |
| Mg‐doped Al0.85Ga0.15N layers grown by hot‐wall MOCVD with low resistivity at room temperature A Kakanakova‐Georgieva, D Nilsson, M Stattin, U Forsberg, Å Haglund, ... physica status solidi (RRL)–Rapid Research Letters 4 (11), 311-313, 2010 | 35 | 2010 |
| Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD A Lundskog, CW Hsu, D Nilsson, KF Karlsson, U Forsberg, PO Holtz, ... Journal of crystal growth 363, 287-293, 2013 | 20 | 2013 |
| Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1− xN alloys determined by mid infrared spectroscopic ellipsometry and … S Schöche, T Hofmann, D Nilsson, A Kakanakova-Georgieva, E Janzén, ... Journal of Applied Physics 121 (20), 2017 | 16 | 2017 |
| Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers D Nilsson, E Janzén, A Kakanakova-Georgieva Applied Physics Letters 105 (8), 2014 | 14 | 2014 |
| On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1) D Nilsson, XT Trinh, E Janzén, NT Son, A Kakanakova‐Georgieva physica status solidi (b) 252 (6), 1306-1310, 2015 | 12 | 2015 |
| On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1) D Nilsson, XT Trinh, E Janzén, NT Son, A Kakanakova‐Georgieva physica status solidi (b) 252 (6), 1306-1310, 2015 | 12 | 2015 |
| Brominated chemistry for chemical vapor deposition of electronic grade SiC M Yazdanfar, O Danielsson, E Kalered, P Sukkaew, O Kordina, D Nilsson, ... Chemistry of Materials 27 (3), 793-801, 2015 | 11 | 2015 |
| Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study A Kakanakova-Georgieva, D Nilsson, XT Trinh, NT Son, E Janzén Solid State Phenomena 205, 441-445, 2014 | 3 | 2014 |
| Negative-U behavior of the Si donor in Al0. 77Ga0. 23N X Thang Trinh, D Nilsson, IG Ivanov, E Janzén, A Kakanakova-Georgieva, ... Applied Physics Letters 103 (4), 2013 | 3 | 2013 |
| Highly Si-doped Al0. 72Ga0. 28N layers: n-type conductivity bound by the process temperature D Nilsson, XT Trinh, TN Son, E Janzén, SL Sahonta, MJ Kappers, ... | | 2014 |
