| Current-to-transconductance ratio technique for simultaneous extraction of threshold voltage and parasitic resistances in MOSFETs H Kim, HB Yoo, JH Ryu, JH Bae, SJ Choi, DH Kim, DM Kim Solid-State Electronics 183, 108133, 2021 | 3 | 2021 |
| Alternating current-based technique for separate extraction of parasitic resistances in MISFETs with or without the body contact H Kim, HB Yoo, JT Yu, JH Ryu, SJ Choi, DH Kim, DM Kim IEEE Electron Device Letters 41 (10), 1528-1531, 2020 | 3 | 2020 |
| Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation HB Yoo, H Kim, JH Ryu, J Park, JH Bae, SJ Choi, DH Kim, DM Kim Solid-State Electronics 186, 108139, 2021 | 1 | 2021 |
| Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect J Yu, HB Yoo, HS Kim, JH Ryu, SJ Choi, DH Kim, DM Kim Journal of Nanoscience and Nanotechnology 21 (8), 4315-4319, 2021 | 1 | 2021 |
| Deep depletion capacitance–voltage technique for spatial distribution of traps across the substrate in MOS structures HB Yoo, J Yu, H Kim, JH Ryu, SJ Choi, DH Kim, DM Kim Solid-State Electronics 173, 107905, 2020 | 1 | 2020 |
| Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell S Lee, H Kim, H Yang, S Yun, J Park, H Lee, S Park, SJ Choi, DH Kim, ... IEEE Electron Device Letters, 2024 | | 2024 |
| Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer H Kim, H Yang, S Lee, S Yun, J Park, S Park, HN Lee, H Kim, SJ Choi, ... Applied Physics Letters 124 (3), 2024 | | 2024 |
| Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors H Kim, HB Yoo, H Lee, JH Ryu, JY Park, SH Han, H Yang, JH Bae, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors JY Park, H Kim, HB Yoo, JH Ryu, SH Han, JH Bae, SJ Choi, DH Kim, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Characterization Technique for Interface Traps in Si Nanosheet GAA MOSFETs through Subthreshold IV Characteristics HB Yoo, H Kim, Y Lee, JH Ryu, JY Park, HJ Yang, JH Bae, DH Kim, ... 2022 IEEE 22nd International Conference on Nanotechnology (NANO), 116-119, 2022 | | 2022 |
| Analysis of Memory Window Degradation Mechanism by Unipolar and Bipolar stress in HfO₂-based FeFETs S Lee, H Kim, H Yang, S Yun, S Choi, DH Kim, DM Kim, J Bae 대한전자공학회 학술대회, 180-182, 2022 | | 2022 |
| Effect of Annealing Sequence on the a-IGZO FeTFT Ferroelectric Switching Characteristics H Yang, H Kim, S Yun, S Lee, DM Kim, DH Kim, S Choi, JH Bae 대한전자공학회 학술대회, 176-177, 2022 | | 2022 |
| Capacitance-Based Extraction Technique for the Spatial and Energy Distributions of Traps in Si Mosfets DM Kim, JH Ryu, HB Yoo, H Kim, JY Park, SH Han, JH Bae, SJ Choi, ... Available at SSRN 4377528, 0 | | |
Han Bin Yoo국민대학교 전자공학부 박사과정Verified email at kookmin.ac.kr
