| Demonstration of L-shaped tunnel field-effect transistors SW Kim, JH Kim, TJK Liu, WY Choi, BG Park IEEE transactions on electron devices 63 (4), 1774-1778, 2015 | 289 | 2015 |
| Double-gate TFET with vertical channel sandwiched by lightly doped Si JH Kim, S Kim, BG Park IEEE Transactions on Electron Devices 66 (4), 1656-1661, 2019 | 84 | 2019 |
| Tunneling field-effect transistor with Si/SiGe material for high current drivability HW Kim, JH Kim, SW Kim, MC Sun, E Park, BG Park Japanese Journal of Applied Physics 53 (6S), 06JE12, 2014 | 39 | 2014 |
| Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs YS Song, JH Kim, G Kim, HM Kim, S Kim, BG Park IEEE Journal of the Electron Devices Society 9, 36-41, 2020 | 36 | 2020 |
| Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, CJ Kim, BG Park IEEE Transactions on electron devices 58 (4), 1127-1133, 2011 | 32 | 2011 |
| Vertical type double gate tunnelling FETs with thin tunnel barrier JH Kim, SW Kim, HW Kim, BG Park Electronics Letters 51 (9), 718-720, 2015 | 29 | 2015 |
| Effects of localized body doping on switching characteristics of tunnel FET inverters with vertical structures DW Kwon, HW Kim, JH Kim, E Park, J Lee, W Kim, S Kim, JH Lee, ... IEEE Transactions on Electron Devices 64 (4), 1799-1805, 2017 | 28 | 2017 |
| Investigation of self-heating effects in vertically stacked GAA MOSFET with wrap-around contact SJ Kang, JH Kim, YS Song, S Go, S Kim IEEE Transactions on Electron Devices 69 (3), 910-914, 2022 | 27 | 2022 |
| High on-current Ge-channel heterojunction tunnel field-effect transistor using direct band-to-band tunneling G Kim, J Lee, JH Kim, S Kim Micromachines 10 (2), 77, 2019 | 24 | 2019 |
| Demonstration of fin-tunnel field-effect transistor with elevated drain JH Kim, HW Kim, G Kim, S Kim, BG Park Micromachines 10 (1), 30, 2019 | 23 | 2019 |
| Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region G Kim, JH Kim, EH Park, D Kang, BG Park Optics Express 22 (2), 1235-1242, 2014 | 21 | 2014 |
| F-shaped tunnel field-effect transistor (tfet) for the low-power application S Yun, J Oh, S Kang, Y Kim, JH Kim, G Kim, S Kim micromachines 10 (11), 760, 2019 | 20 | 2019 |
| Analysis of current variation with work function variation in l-shaped tunnel-field effect transistor JH Kim, HW Kim, YS Song, S Kim, G Kim Micromachines 11 (8), 780, 2020 | 19 | 2020 |
| Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors JH Kim, DW Kwon, JS Chang, SW Kim, JC Park, CJ Kim, BG Park Applied Physics Letters 99 (4), 2011 | 18 | 2011 |
| Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, I Song, CJ Kim, ... Applied Physics Letters 98 (6), 2011 | 17 | 2011 |
| Schottky barrier tunnel field-effect transistor using spacer technique HW Kim, JP Kim, SW Kim, MC Sun, G Kim, JH Kim, E Park, H Kim, ... JSTS: Journal of Semiconductor Technology and Science 14 (5), 572-578, 2014 | 16 | 2014 |
| L-shaped tunnel FET with stacked gates to suppress the corner effect SS Shin, JH Kim, S Kim Japanese Journal of Applied Physics 58 (SD), SDDE10, 2019 | 13 | 2019 |
| A novel fabrication method for the Nanoscale tunneling field effect transistor HW Kim, JH Kim, SW Kim, MC Sun, G Kim, E Park, H Kim, KW Kim, ... Journal of nanoscience and nanotechnology 12 (7), 5592-5597, 2012 | 12 | 2012 |
| Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET YS Song, S Tayal, SB Rahi, JH Kim, AK Upadhyay, BG Park 2022 5th International Conference on Circuits, Systems and Simulation (ICCSS …, 2022 | 11 | 2022 |
| Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design YS Song, S Kim, G Kim, H Kim, JH Lee, JH Kim, BG Park Japanese Journal of Applied Physics 60 (SC), SCCE04, 2021 | 11 | 2021 |
Sangwan KimDepartment of Electronic Engineering, Sogang UniversityVerified email at sogang.ac.kr
