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Jiwon Chang
Jiwon Chang
Verified email at yonsei.ac.kr
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Cited by
Cited by
Year
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
1812015
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
832014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
832014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 141603, 2014
822014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
822014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
822014
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 223509, 2013
612013
Tunnelling-based ternary metal–oxide–semiconductor technology
JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ...
Nature Electronics 2 (7), 307-312, 2019
562019
Theoretical study of phosphorene tunneling field effect transistors
J Chang, C Hobbs
Applied Physics Letters 106 (8), 083509, 2015
492015
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
402015
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
382012
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
382012
Density functional study of ternary topological insulator thin films
J Chang, LF Register, SK Banerjee, B Sahu
Physical Review B 83 (23), 235108, 2011
372011
Analytical model of short-channel double-gate JFETs
J Chang, AK Kapoor, LF Register, SK Banerjee
IEEE transactions on electron devices 57 (8), 1846-1855, 2010
352010
Topological insulator-based field-effect transistor
SK Banerjee, IILF Register, A MacDonald, BR Sahu, P Jadaun, J Chang
US Patent 8,629,427, 2014
262014
Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure
J Chang
Nanoscale, 2018
212018
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
J Chang
Journal of Applied Physics 117 (21), 214502, 2015
172015
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
J Chang
Journal of Applied Physics 117 (21), 214502, 2015
172015
A 2D material-based floating gate device with linear synaptic weight update
E Park, M Kim, TS Kim, IS Kim, J Park, J Kim, YJ Jeong, S Lee, I Kim, ...
Nanoscale 12 (48), 24503-24509, 2020
132020
Tunable Current Transport in PdSe2 via Layer‐by‐Layer Thickness Modulation by Mild Plasma
T Das, D Seo, JE Seo, J Chang
Advanced Electronic Materials 6 (5), 2000008, 2020
122020
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Articles 1–20