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Kyung Rok Kim
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RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs
S Cho, KR Kim, BG Park, IM Kang
IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011
1902011
Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors
S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang
IEEE Transactions on Electron Devices 58 (12), 4164-4171, 2011
942011
Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic
DH Kim, SK Sung, KR Kim, JD Lee, BG Park, BH Choi, SW Hwang, D Ahn
IEEE Transactions on Electron Devices 49 (4), 627-635, 2002
702002
Tunnelling-based ternary metal–oxide–semiconductor technology
JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ...
Nature Electronics 2 (7), 307-312, 2019
582019
ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
L Lee, J Hwang, JW Jung, J Kim, HI Lee, S Heo, M Yoon, S Choi, ...
Nature communications 10 (1), 1-9, 2019
562019
A practical SPICE model based on the physics and characteristics of realistic single-electron transistors
SH Lee, DH Kim, KR Kim, JD Lee, BG Park, YJ Gu, GY Yang, JT Kong
IEEE transactions on nanotechnology 1 (4), 226-232, 2002
532002
High-Performance Plasmonic THz Detector Based on Asymmetric FET With Vertically Integrated Antenna in CMOS Technology
MW Ryu, JS Lee, KS Kim, K Park, JR Yang, ST Han, KR Kim
IEEE Transactions on Electron Devices 63 (4), 1742-1748, 2016
452016
Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method
DH Kim, SK Sung, JS Sim, KR Kim, JD Lee, BG Park, BH Choi, ...
Applied Physics Letters 79 (23), 3812-3814, 2001
452001
Compact Design of Low Power Standard Ternary Inverter Based on OFF-State Current Mechanism Using Nano-CMOS Technology
S Shin, E Jang, JW Jeong, BG Park, KR Kim
IEEE Transactions on Electron Devices 62 (8), 2396-2403, 2015
442015
Ternary full adder using multi-threshold voltage graphene barristors
S Heo, S Kim, K Kim, H Lee, SY Kim, YJ Kim, SM Kim, HI Lee, S Lee, ...
IEEE Electron Device Letters 39 (12), 1948-1951, 2018
422018
A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
KH Kim, HY Park, J Shim, G Shin, M Andreev, J Koo, G Yoo, K Jung, ...
Nanoscale Horizons 5 (4), 654-662, 2020
382020
A logic synthesis methodology for low-power ternary logic circuits
S Kim, SY Lee, S Park, KR Kim, S Kang
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (9), 3138-3151, 2020
342020
A novel ternary multiplier based on ternary CMOS compact model
Y Kang, J Kim, S Kim, S Shin, ES Jang, JW Jeong, KR Kim, S Kang
2017 IEEE 47th International Symposium on Multiple-Valued Logic (ISMVL), 25-30, 2017
302017
Silicon-based field-induced band-to-band tunnelling effect transistor
KR Kim, DH Kim, KW Song, G Baek, HH Kim, J Im Huh, JD Lee, BG Park
IEEE Electron Device Letters 25 (6), 439-441, 2004
272004
Performance enhancement of plasmonic sub-terahertz detector based on antenna integrated low-impedance silicon MOSFET
MW Ryu, KS Kim, JS Lee, K Park, JR Yang, ST Han, KR Kim
IEEE Electron Device Letters 36 (3), 220-222, 2015
252015
Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance
KR Kim, HH Kim, KW Song, J Im Huh, JD Lee, BG Park
IEEE transactions on nanotechnology 4 (3), 317-321, 2005
242005
Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body
KR Kim, DH Kim, SK Sung, JD Lee, BG Park
IEEE Electron Device Letters 23 (10), 612-614, 2002
242002
Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire
DH Kim, SK Sung, KR Kim, JD Lee, BG Park
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
242002
Single-electron transistors based on gate-induced Si island for single-electron logic application
DH Kim, SK Sung, KR Kim, JD Lee, BG Park
IEEE transactions on nanotechnology 1 (4), 170-175, 2002
232002
Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications
S Shin, KR Kim
Japanese Journal of Applied Physics 54 (6S1), 06FG07, 2015
182015
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Articles 1–20