| Ferroelectric memories JF Scott, CA Paz de Araujo Science 246 (4936), 1400-1405, 1989 | 3813 | 1989 |
| Fatigue-free ferroelectric capacitors with platinum electrodes CAP de Araujo, JD Cuchiaro, LD McMillan, MC Scott, JF Scott Nature 374 (6523), 627-629, 1995 | 2997 | 1995 |
| Fatigue and switching in ferroelectric memories: Theory and experiment HM Duiker, PD Beale, JF Scott, CA Paz de Araujo, BM Melnick, ... Journal of applied physics 68 (11), 5783-5791, 1990 | 592 | 1990 |
| Methods and apparatus for material deposition LD McMillan, CAP de Araujo US Patent 5,119,760, 1992 | 471 | 1992 |
| Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition CAP de Araujo, LD McMillan, N Solayappan, JW Bacon US Patent 6,110,531, 2000 | 354 | 2000 |
| Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue-has high dielectric constant and low leakage current CAP de Araujo, JD Cuchiaro, MC Scott, LD McMillan US Patent 5,519,234, 1996 | 308 | 1996 |
| Ferroelectric memories CA Paz De Araujo, LD McMillan, BM Melnick, JD Cuchiaro, JF Scott Ferroelectrics 104 (1), 241-256, 1990 | 298 | 1990 |
| Correlated electron memory CAP de Araujo, J Celinska, MD Brubaker US Patent 7,872,900, 2011 | 268 | 2011 |
| Non-volatile resistance switching memories and methods of making same MD Brubaker, CAP de Araujo, J Celinska US Patent 7,778,063, 2010 | 267 | 2010 |
| Ferroelectric thin films: synthesis and basic properties CP De Araujo, JF Scott, GW Taylor Taylor & Francis US, 1996 | 265 | 1996 |
| Preparation of ferroelectric thin films of bismuth layer structured compounds H Watanabe, T Mihara, H Yoshimori, CAP de Araujo Japanese journal of applied physics 34 (9S), 5240, 1995 | 258 | 1995 |
| Characteristics of bismuth layered SrBi2Ta2O9 thin-film capacitors and comparison with Pb (Zr, Ti) O3 T Mihara, H Yoshimori, H Watanabe, CAP de Araujo Japanese journal of applied physics 34 (9S), 5233, 1995 | 237 | 1995 |
| Polarization fatigue characteristics of sol-gel ferroelectric Pb (Zr0. 4Ti0. 6) O3 thin-film capacitors T Mihara, HWP de Araujo Japanese journal of applied physics 33 (7R), 3996, 1994 | 213 | 1994 |
| Fabrication and operation of correlated electron material devices CAP de ARAUJO, JB Celinska, KG Reid, L Shifren | 201 | 2018 |
| Stabilized resistive switching memory J Celinska, MD Brubaker, CAP de Araujo US Patent 7,639,523, 2009 | 198 | 2009 |
| Ferroelectric memory and method of operating same Z Chen, V Joshi, M Lim, CAP de Araujo, LD McMillan, Y Kato, T Otsuki, ... US Patent 6,924,997, 2005 | 179 | 2005 |
| Ferroelectric integrated circuit T Mihara, H Yoshimori, H Watanabe, LD McMillan, CP De Araujo US Patent 5,561,307, 1996 | 166 | 1996 |
| Characteristic change due to polarization fatigue of sol-gel ferroelectric Pb (Zr0. 4Ti0. 6) O3 thin-film capacitors T Mihara, HWP de Araujo Japanese journal of applied physics 33 (9S), 5281, 1994 | 164 | 1994 |
| 1T1R resistive memory array with chained structure Z Chen, CAP de Araujo, LD Mcmillan US Patent 7,298,640, 2007 | 138 | 2007 |
| Method and apparatus for fabrication of thin films by chemical vapor deposition CAP de Araujo, LD McMillan, N Solayappan, JW Bacon US Patent 6,511,718, 2003 | 133 | 2003 |
David W. H. A. da SilvaSymetrix CorporationVerified email at symetrixcorp.com
