Carlos Paz de Araujo
Carlos Paz de Araujo
Professor of Electrical Engineering, University of Colorado at Colorado Springs
No verified email - Homepage
Title
Cited by
Cited by
Year
Ferroelectric memories
JF Scott, CAP De Araujo
Science 246 (4936), 1400-1405, 1989
34171989
Fatigue and switching in ferroelectric memories: Theory and experiment
HM Duiker, PD Beale, JF Scott, CA Paz de Araujo, BM Melnick, ...
Journal of applied physics 68 (11), 5783-5791, 1990
5841990
Ferroelectric memories
CA Paz De Araujo, LD McMillan, BM Melnick, JD Cuchiaro, JF Scott
Ferroelectrics 104 (1), 241-256, 1990
3051990
Preparation of ferroelectric thin films of bismuth layer structured compounds
H Watanabe, T Mihara, H Yoshimori, CAP de Araujo
Japanese journal of applied physics 34 (9S), 5240, 1995
2671995
Correlated electron memory
CAP de Araujo, J Celinska, MD Brubaker
US Patent 7,872,900, 2011
2512011
Non-volatile resistance switching memories and methods of making same
MD Brubaker, CAP de Araujo, J Celinska
US Patent 7,778,063, 2010
2482010
Methods and apparatus for material deposition
LD McMillan, CAP de Araujo
US Patent 5,119,760, 1992
2471992
Characteristics of bismuth layered SrBi2Ta2O9 thin-film capacitors and comparison with Pb (Zr, Ti) O3
T Mihara, H Yoshimori, H Watanabe, CAP de Araujo
Japanese journal of applied physics 34 (9S), 5233, 1995
2311995
Ferroelectric thin films: synthesis and basic properties
CP De Araujo, JF Scott, GW Taylor
Taylor & Francis, 1996
2151996
Polarization fatigue characteristics of sol-gel ferroelectric Pb (Zr0. 4Ti0. 6) O3 thin-film capacitors
T Mihara, H Watanabe, CAP de Araujo
Japanese journal of applied physics 33 (7R), 3996, 1994
2081994
Stabilized resistive switching memory
J Celinska, MD Brubaker, CAP de Araujo
US Patent 7,639,523, 2009
1862009
Characteristic change due to polarization fatigue of sol-gel ferroelectric Pb (Zr0. 4Ti0. 6) O3 thin-film capacitors
T Mihara, H Watanabe, CAP de Araujo
Japanese journal of applied physics 33 (9S), 5281, 1994
1671994
Ferroelectric integrated circuit
T Mihara, H Yoshimori, H Watanabe, LD McMillan, CP De Araujo
US Patent 5,561,307, 1996
1651996
1T1R resistive memory array with chained structure
Z Chen, CAP de Araujo, LD Mcmillan
US Patent 7,298,640, 2007
1282007
Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
CAP de Araujo, LD McMillan, N Solayappan, JW Bacon
US Patent 6,110,531, 2000
1262000
Scaling of ferroelectric and piezoelectric properties in thin films
CS Ganpule, A Stanishevsky, S Aggarwal, J Melngailis, E Williams, ...
Applied Physics Letters 75 (24), 3874-3876, 1999
1261999
Ferroelectric memory and method of operating same
Z Chen, V Joshi, M Lim, CAP de Araujo, LD Mcmillan, Y Kato, T Otsuki, ...
US Patent 6,924,997, 2005
1242005
Method and apparatus for fabrication of thin films by chemical vapor deposition
CAP de Araujo, LD McMillan, N Solayappan, JW Bacon
US Patent 6,511,718, 2003
1232003
Timepiece communication system
R Lyndon-James, AP Gnadinger, DL Black, CP De Araujo
US Patent 4,800,543, 1989
1191989
Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics
JF Scott, M Azuma, CA Paz de Araujo, LD McMillan, MC Scott, T Roberts
Integrated ferroelectrics 4 (1), 61-84, 1994
1181994
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