| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 393 | 2016 |
| Air Stable p-Doping of WSe2 by Covalent Functionalization P Zhao, D Kiriya, A Azcatl, C Zhang, M Tosun, YS Liu, M Hettick, JS Kang, ... ACS nano 8 (10), 10808-10814, 2014 | 261 | 2014 |
| Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures C Zhang, C Gong, Y Nie, KA Min, C Liang, YJ Oh, H Zhang, W Wang, ... 2D Materials 4 (1), 015026, 2016 | 215 | 2016 |
| Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping K Zhang, BM Bersch, J Joshi, R Addou, CR Cormier, C Zhang, K Xu, ... Advanced Functional Materials 28 (16), 1706950, 2018 | 183 | 2018 |
| Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and WxMo1–xTe2 Alloy C Zhang, S Kc, Y Nie, C Liang, WG Vandenberghe, RC Longo, Y Zheng, ... ACS nano 10 (8), 7370-7375, 2016 | 155 | 2016 |
| Site-dependent multicomponent doping strategy for Ni-rich LiNi 1− 2y Co y Mn y O 2 (y= 1/12) cathode materials for Li-ion batteries C Liang, F Kong, RC Longo, C Zhang, Y Nie, Y Zheng, K Cho Journal of materials chemistry A 5 (48), 25303-25313, 2017 | 128 | 2017 |
| Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation RC Longo, R Addou, KC Santosh, JY Noh, CM Smyth, D Barrera, ... 2D Materials 4 (2), 025050, 2017 | 107 | 2017 |
| A GGA+ U study of lithium diffusion in vanadium doped LiFePO4 H Lin, Y Wen, C Zhang, L Zhang, Y Huang, B Shan, R Chen Solid State Communications 152 (12), 999-1003, 2012 | 91 | 2012 |
| New Mo6Te6 Sub‐Nanometer‐Diameter Nanowire Phase from 2H‐MoTe2 H Zhu, Q Wang, C Zhang, R Addou, K Cho, RM Wallace, MJ Kim Advanced Materials 29 (18), 1606264, 2017 | 75 | 2017 |
| Obstacles toward unity efficiency of LiNi1-2xCoxMnxO2 (x= 0∼ 1/3)(NCM) cathode materials: Insights from ab initio calculations C Liang, RC Longo, F Kong, C Zhang, Y Nie, Y Zheng, JS Kim, S Jeon, ... Journal of Power Sources 340, 217-228, 2017 | 60 | 2017 |
| Ab Initio Study on Surface Segregation and Anisotropy of Ni-Rich LiNi1–2yCoyMnyO2 (NCM) (y ≤ 0.1) Cathodes C Liang, RC Longo, F Kong, C Zhang, Y Nie, Y Zheng, K Cho ACS applied materials & interfaces 10 (7), 6673-6680, 2018 | 59 | 2018 |
| Atomic and Electronic Structures of WTe2 Probed by High Resolution Electron Microscopy and ab Initio Calculations N Lu, C Zhang, CH Lee, JP Oviedo, MAT Nguyen, X Peng, RM Wallace, ... The Journal of Physical Chemistry C 120 (15), 8364-8369, 2016 | 47 | 2016 |
| Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave KC Santosh, C Zhang, S Hong, RM Wallace, K Cho 2D Materials 2 (3), 035019, 2015 | 37 | 2015 |
| Dislocation driven spiral and non-spiral growth in layered chalcogenides Y Nie, AT Barton, R Addou, Y Zheng, LA Walsh, SM Eichfeld, R Yue, ... Nanoscale 10 (31), 15023-15034, 2018 | 30 | 2018 |
| Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization JH Park, A Rai, J Hwang, C Zhang, I Kwak, SF Wolf, S Vishwanath, X Liu, ... ACS nano 13 (7), 7545-7555, 2019 | 26 | 2019 |
| Atomic Insights into Phase Evolution in Ternary Transition‐Metal Dichalcogenides Nanostructures YC Zou, ZG Chen, S Liu, K Aso, C Zhang, F Kong, M Hong, S Matsumura, ... Small 14 (22), 1800780, 2018 | 15 | 2018 |
| Giant renormalization of dopant impurity levels in 2D semiconductor MoS2 J Hwang, C Zhang, YS Kim, RM Wallace, K Cho Scientific Reports 10 (1), 4938, 2020 | 14 | 2020 |
| Structural and electronic phase transitions of MoTe2 induced by Li ionic gating J Hwang, C Zhang, K Cho 2D Materials 4 (4), 045012, 2017 | 9 | 2017 |
| Charge-transfer modified embedded atom method dynamic charge potential for Li–Co–O system F Kong, RC Longo, C Liang, Y Nie, Y Zheng, C Zhang, K Cho Journal of Physics: Condensed Matter 29 (47), 475903, 2017 | 5 | 2017 |
| Electronic transport across metal-graphene edge contact C Gong, C Zhang, YJ Oh, W Wang, G Lee, B Shan, RM Wallace, K Cho 2D Materials 4 (2), 025033, 2017 | 5 | 2017 |
