Moshe Eizenberg
Moshe Eizenberg
Technion and Guangdong Technion- Israel Institute of Technology
Verified email at technion.ac.il - Homepage
Title
Cited by
Cited by
Year
Carbon monolayer phase condensation on Ni (111)
M Eizenberg, JM Blakely
Surface Science 82 (1), 228-236, 1979
6481979
Carbon interaction with nickel surfaces: Monolayer formation and structural stability
M Eizenberg, JM Blakely
The Journal of Chemical Physics 71 (8), 3467-3477, 1979
1611979
Characterization of electroless deposited Co (W, P) thin films for encapsulation of copper metallization
A Kohn, M Eizenberg, Y Shacham-Diamand, Y Sverdlov
Materials Science and Engineering: A 302 (1), 18-25, 2001
1532001
Annealing-induced interfacial toughening using a molecular nanolayer
DD Gandhi, M Lane, Y Zhou, AP Singh, S Nayak, U Tisch, M Eizenberg, ...
Nature 447 (7142), 299-302, 2007
1382007
Interfacial reactions between Ni films and GaAs
A Lahav, M Eizenberg, Y Komem
Journal of applied physics 60 (3), 991-1001, 1986
1371986
Formation and Schottky behavior of manganese silicides on n‐type silicon
M Eizenberg, KN Tu
journal of Applied Physics 53 (10), 6885-6890, 1982
1131982
Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion‐beam sputter deposition
F Meyer, M Zafrany, M Eizenberg, R Beserman, C Schwebel, C Pellet
Journal of applied physics 70 (8), 4268-4277, 1991
106*1991
Interlayer dielectrics for semiconductor technologies
SP Muraka, M Eizenberg, AK Sinha
Elsevier, 2003
982003
TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices
M Eizenberg, K Littau, S Ghanayem, A Mak, Y Maeda, M Chang, ...
Applied physics letters 65 (19), 2416-2418, 1994
971994
Evaluation of electroless deposited Co (W, P) thin films as diffusion barriers for copper metallization
A Kohn, M Eizenberg, Y Shacham-Diamand, B Israel, Y Sverdlov
Microelectronic engineering 55 (1-4), 297-303, 2001
892001
Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications
M Eizenberg, K Littau, S Ghanayem, M Liao, R Mosely, AK Sinha
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 …, 1995
871995
New method for determining flat-band voltage in high mobility semiconductors
R Winter, J Ahn, PC McIntyre, M Eizenberg
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
842013
Structures of ultra-thin atomic-layer-deposited films
YY Wu, A Kohn, M Eizenberg
Journal of applied physics 95 (11), 6167-6174, 2004
782004
Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices
R Kröger, M Eizenberg, D Cong, N Yoshida, LY Chen, S Ramaswami, ...
Journal of the Electrochemical Society 146 (9), 3248, 1999
771999
Energy band discontinuities in heterojunctions measured by internal photoemission
M Heiblum, MI Nathan, M Eizenberg
Applied physics letters 47 (5), 503-505, 1985
731985
Forming low-resistance contact to silicon
M Eizenberg, SP Murarka
US Patent 4,502,209, 1985
651985
Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma
M Danek, M Liao, J Tseng, K Littau, D Saigal, H Zhang, R Mosely, ...
Applied physics letters 68 (7), 1015-1016, 1996
631996
Analysis of nonideal Schottky and pn junction diodes—Extraction of parameters from IV plots
M Lyakas, R Zaharia, M Eizenberg
Journal of applied physics 78 (9), 5481-5489, 1995
631995
The effect of surface roughness on the resistivity increase in nanometric dimensions
H Marom, M Eizenberg
Journal of applied physics 99 (12), 123705, 2006
622006
Utilization of SiH4 soak and purge in deposition processes
MC Tseng, M Chang, RA Srinivas, KD Rinnen, M Eizenberg, S Telford
US Patent 5,817,576, 1998
611998
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