| Semiconductor structure with self-aligned wells and multiple channel materials DP Brunco US Patent 9,257,557, 2016 | 365 | 2016 |
| Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ... Journal of The Electrochemical Society 155 (7), H552, 2008 | 341 | 2008 |
| High performance Ge pMOS devices using a Si-compatible process flow P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 173 | 2006 |
| Complete experimental test of kinetic models for rapid alloy solidification JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson Acta materialia 48 (20), 4797-4811, 2000 | 157 | 2000 |
| Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 145 | 2008 |
| High-performance deep submicron Ge pMOSFETs with halo implants G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ... IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007 | 120 | 2007 |
| Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ... Thin Solid Films 515 (16), 6337-6343, 2007 | 105 | 2007 |
| Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ... IEEE Transactions on Electron Devices 55 (9), 2287-2296, 2008 | 102 | 2008 |
| Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities B Govoreanu, DP Brunco, J Van Houdt Solid-state electronics 49 (11), 1841-1848, 2005 | 92 | 2005 |
| Temperature measurements of polyimide during KrF excimer laser ablation DP Brunco, MO Thompson, CE Otis, PM Goodwin Journal of applied Physics 72 (9), 4344-4350, 1992 | 92 | 1992 |
| Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ALD HfO/sub 2/metal gate stacks under positive constant voltage stress R Degraeve, T Kauerauf, M Cho, M Zahid, LA Ragnarsson, DP Brunco, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 87 | 2005 |
| Germanium partitioning in silicon during rapid solidification DP Brunco, MO Thompson, DE Hoglund, MJ Aziz, HJ Gossmann Journal of applied physics 78 (3), 1575-1582, 1995 | 87 | 1995 |
| Nonequilibrium partitioning during rapid solidification of Si As alloys JA Kittl, MJ Aziz, DP Brunco, MO Thompson Journal of crystal growth 148 (1-2), 172-182, 1995 | 81 | 1995 |
| Silicides and germanides for nano-CMOS applications JA Kittl, K Opsomer, C Torregiani, C Demeurisse, S Mertens, DP Brunco, ... Materials Science and Engineering: B 154, 144-154, 2008 | 72 | 2008 |
| Electron energy band alignment at interfaces of (100) Ge with rare-earth oxide insulators VV Afanas’ev, S Shamuilia, A Stesmans, A Dimoulas, Y Panayiotatos, ... Applied physics letters 88 (13), 2006 | 64 | 2006 |
| High performance 70-nm germanium pMOSFETs with boron LDD implants G Hellings, J Mitard, G Eneman, B De Jaeger, DP Brunco, D Shamiryan, ... IEEE Electron Device Letters 30 (1), 88-90, 2008 | 61 | 2008 |
| Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium DP Brunco, A Dimoulas, N Boukos, M Houssa, T Conard, K Martens, ... Journal of Applied Physics 102 (2), 2007 | 61 | 2007 |
| Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process L Witters, J Mitard, R Loo, G Eneman, H Mertens, DP Brunco, SH Lee, ... 2013 IEEE International Electron Devices Meeting, 20.4. 1-20.4. 4, 2013 | 57 | 2013 |
| Germanium: The past and possibly a future material for microelectronics DP Brunco, B De Jaeger, G Eneman, A Satta, V Terzieva, L Souriau, ... ECS Transactions 11 (4), 479, 2007 | 57 | 2007 |
| Scaling to sub-1 nm equivalent oxide thickness with hafnium oxide deposited by atomic layer deposition A Delabie, M Caymax, B Brijs, DP Brunco, T Conard, E Sleeckx, ... Journal of the Electrochemical Society 153 (8), F180, 2006 | 57 | 2006 |
