Sangwoo Kang
Sangwoo Kang
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van der Waals heterostructures with high accuracy rotational alignment
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
arXiv preprint arXiv:1604.06850, 2016
Gate-tunable resonant tunneling in double bilayer graphene heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors
S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano Letters 16 (8), 4975-4981, 2016
Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors
S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee
Journal of Applied Physics 119 (12), 124502, 2016
Self-aligned dual-gate single-electron transistors
S Kang, DH Kim, IH Park, JH Kim, JE Lee, JD Lee, BG Park
Japanese journal of applied physics 47 (4S), 3118, 2008
Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures
HCP Movva, S Kang, A Rai, K Kim, B Fallahazad, T Taniguchi, ...
2016 74th Annual Device Research Conference (DRC), 2016
Fabrication and characterization of fin SONOS flash memory with separated double-gate structure
JG Yun, Y Kim, IH Park, JH Lee, S Kang, DH Lee, S Cho, DH Kim, GS Lee, ...
Solid-state electronics 52 (10), 1498-1504, 2008
Fabrication and characteristics of self-aligned dual-gate single-electron transistors
DS Lee, S Kang, KC Kang, JE Lee, JH Lee, KJ Song, DM Kim, JD Lee, ...
IEEE transactions on nanotechnology 8 (4), 492-497, 2009
ACS Nano 9, 10402 (2015)
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ReS2-based interlayer tunnel field effect transistor
OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ...
Journal of Applied Physics 122 (24), 245701, 2017
Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications
S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ...
Journal of Physics D: Applied Physics 50 (38), 383002, 2017
Capacitorless dynamic random access memory cell with highly scalable surrounding gate structure
H Jeong, YS Lee, S Kang, IH Park, WY Choi, H Shin, JD Lee, BG Park
Japanese journal of applied physics 46 (4S), 2143, 2007
Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors
A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee
Applied Physics Letters 104 (8), 083106, 2014
Improving the endurance characteristics through boron implant at active edge in 1 G nand flash
D Kang, S Chang, S Seo, Y Song, H Yoon, E Lee, D Chang, W Lee, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
Capacitorless DRAM Cell with Highly Scalable Surrounding Gate Structure
H Jeong, YS Lee, S Kang, IH Park, WY Choi, H Shin, JD Lee, BG Park
Analytical modeling of field-induced interband tunneling-effect transistors and its application
SH Song, KR Kim, S Kang, JH Kim, J Im Huh, KC Kang, KW Song, JD Lee, ...
IEEE transactions on nanotechnology 5 (3), 192-200, 2006
Poly-silicon quantum dot single electron transistors
KC Kang, S Kang, HS Yang, S Song, J Kim, JD Lee, BG Park
2007 International Semiconductor Device Research Symposium, 1-2, 2007
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