| Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching M Ismail, MK Rahmani, SA Khan, J Choi, F Hussain, Z Batool, AM Rana, ... Applied Surface Science 498, 143833, 2019 | 47 | 2019 |
| Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device SA Khan, GH Lee, C Mahata, M Ismail, H Kim, S Kim Nanomaterials 11 (2), 315, 2021 | 31 | 2021 |
| Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features S Rehman, MF Khan, MK Rahmani, H Kim, H Patil, SA Khan, MH Kang, ... Nanomaterials 10 (12), 2326, 2020 | 30 | 2020 |
| Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory M Ismail, SA Khan, MK Rahmani, J Choi, Z Batool, AM Rana, S Kim Materials Research Express 7 (1), 016307, 2020 | 21 | 2020 |
| Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO 2-based resistive switching memory for neuromorphic … SA Khan, S Kim RSC advances 10 (52), 31342-31347, 2020 | 18 | 2020 |
| Polymer-based non-volatile resistive random-access memory device fabrication with multi-level switching and negative differential resistance state SA Khan, MK Rahmani, HW Kim, MF Khan, C Yun, MH Kang Organic Electronics 96, 106228, 2021 | 14 | 2021 |
| Asymmetric GaN/ZnO engineered resistive memory device for electronic synapses MU Khan, CM Furqan, J Kim, SA Khan, QM Saqib, MY Chougale, ... ACS Applied Electronic Materials 4 (1), 297-307, 2022 | 13 | 2022 |
| Fully solution-processed organic RRAM device with highly stable butterfly-shaped hysteresis MK Rahmani, SA Khan, MF Khan, MH Kang Materials Science and Engineering: B 282, 115784, 2022 | 12 | 2022 |
| Multistate resistive switching with self-rectifying behavior and synaptic characteristics in a solution-processed ZnO/PTAA bilayer memristor SA Khan, MK Rahmani, MU Khan, J Kim, J Bae, MH Kang Journal of The Electrochemical Society 169 (6), 063517, 2022 | 9 | 2022 |
| Demonstration of high-stable bipolar resistive switching and bio-inspired synaptic characteristics using PEDOT: PSS-based memristor devices MK Rahmani, SA Khan, H Kim, MU Khan, J Kim, J Bae, MH Kang Organic Electronics 114, 106730, 2023 | 8 | 2023 |
| Specific thermoelectric features of novel CaPd3B4O12 (B= Ti, V) perovskites following DFT calculations M Umer, A Irfan, M Mahboob, S Ali, M Rani, S Azam, S Khan, M Irfan, ... Physica B: Condensed Matter 545, 330-336, 2018 | 5 | 2018 |
| Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment JH Park, SA Khan, MK Rahmani, J Cho, MH Kang Materials Research Express 9 (8), 085903, 2022 | 4 | 2022 |
| Modulation of the electrical characteristics on poly (3, 4-ethylenedioxythiophene)-poly (styrenesulfonate)-based resistive random access memory device by the impact of top … MK Rahmani, SA Khan, JH Park, BD Yang, MH Kang Thin Solid Films 748, 139168, 2022 | 2 | 2022 |
| Resistive switching and conductance quantization in poly (3, 4-ethylenedioxythiophene)-poly (styrenesulfonate)-based resistive random access memory device with printable top … SA Khan, MK Rahmani, JH Park, H Kim, C Yun, MH Kang Thin Solid Films 748, 139150, 2022 | 1 | 2022 |
| Density Functional Theory Investigations of the Optoelectronic Properties of Li2MnGeS4 and Li2CoSnS4 S Azam, M Mahboob, S Ali, M Rani, M Irfan, X Wang, SA Khan, ... Spin 9 (03), 1950015, 2019 | 1 | 2019 |
| Prevailing scenario of women in physics in Pakistan: A case study of Southern Punjab SA Khan, M Mahboob, T Yaqoob, N Zeerak, M Rani Canadian Journal of Physics 95 (7), xxix-xxxi, 2017 | 1 | 2017 |
| Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers SA Khan, F Hussain, D Chung, MK Rahmani, M Ismail, C Mahata, ... Micromachines 13 (9), 1498, 2022 | | 2022 |
| Negative differential resistance effect in polymer bilayer RRAM devices fabricated from solution-process MK Rahmani, SA Khan, JH Park, DH Ha, DO Seo, HY Nam, MH Kang | | |
| All solution-processed RRAM fabrication method owing from a conductive polymer PEDOT: PSS JH Park, MK Rahmani, SA Khan, MH Kang | | |
| Tunable Resistive Switching: Volatile to Non-Volatile Memory controlled by Current Compliance in ZnO-based RRAM device SA Khan, MK Rahmani, JH Park, DH Ha, D oh Seo, HY Nam, MH Kang | | |
Moon Hee KangChungbuk National UniversityVerified email at chungbuk.ac.kr
