|Large-area synthesis of high-quality and uniform graphene films on copper foils|
X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ...
science 324 (5932), 1312-1314, 2009
|Realization of a high mobility dual-gated graphene field-effect transistor with dielectric|
S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee
Applied Physics Letters 94 (6), 062107, 2009
|Neuromorphic computing using non-volatile memory|
GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ...
Advances in Physics: X 2 (1), 89-124, 2017
|Coulomb drag of massless fermions in graphene|
S Kim, I Jo, J Nah, Z Yao, SK Banerjee, E Tutuc
Physical Review B 83 (16), 161401, 2011
|Dielectric thickness dependence of carrier mobility in graphene with top dielectric|
B Fallahazad, S Kim, L Colombo, E Tutuc
Applied Physics Letters 97 (12), 123105, 2010
|Scaling of Al2O3 dielectric for graphene field-effect transistors|
B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ...
Applied Physics Letters 100 (9), 093112, 2012
|Graphene for CMOS and beyond CMOS applications|
SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ...
Proceedings of the IEEE 98 (12), 2032-2046, 2010
|Direct measurement of the Fermi energy in graphene using a double-layer heterostructure|
S Kim, I Jo, DC Dillen, DA Ferrer, B Fallahazad, Z Yao, SK Banerjee, ...
Physical review letters 108 (11), 116404, 2012
|Low-frequency acoustic phonon temperature distribution in electrically biased graphene|
I Jo, IK Hsu, YJ Lee, MM Sadeghi, S Kim, S Cronin, E Tutuc, SK Banerjee, ...
Nano letters 11 (1), 85-90, 2011
|Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at in High Magnetic Fields|
S Kim, K Lee, E Tutuc
Physical review letters 107 (1), 016803, 2011
|Signal and noise extraction from analog memory elements for neuromorphic computing|
N Gong, T Idé, S Kim, I Boybat, A Sebastian, V Narayanan, T Ando
Nature communications 9 (1), 1-8, 2018
|Coulomb drag and magnetotransport in graphene double layers|
S Kim, E Tutuc
Solid State Communications 152 (15), 1283-1288, 2012
|Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition|
B Fallahazad, Y Hao, K Lee, S Kim, RS Ruoff, E Tutuc
Physical Review B 85 (20), 201408, 2012
|ECRAM as scalable synaptic cell for high-speed, low-power neuromorphic computing|
J Tang, D Bishop, S Kim, M Copel, T Gokmen, T Todorov, SH Shin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2018
|Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: Evidence for Bernal stacking|
K Lee, S Kim, MS Points, TE Beechem, T Ohta, E Tutuc
Nano letters 11 (9), 3624-3628, 2011
|Analog CMOS-based resistive processing unit for deep neural network training|
S Kim, T Gokmen, HM Lee, WE Haensch
2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), 2017
|Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene|
SH Bae, X Zhouc, S Kim, YS Lee, SS Cruz, Y Kim, JB Hannon, Y Yang, ...
Proceedings of the National Academy of Sciences of the United States of …, 2017
|Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene|
L Colombo, S Banerjee, S Kim, E Tutuc
US Patent 8,198,707, 2012
|Capacitor-based cross-point array for analog neural network with record symmetry and linearity|
Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ...
2018 IEEE Symposium on VLSI Technology, 25-26, 2018
|Circuit methodology for highly linear and symmetric resistive processing unit|
T Gokmen, S Kim, HM Lee, W Lee, PM Solomon
US Patent 9,852,790, 2017