| Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances SJ Kim, J Mohan, SR Summerfelt, J Kim Jom 71, 246-255, 2019 | 266 | 2019 |
| Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017 | 263 | 2017 |
| Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400° C) Hf0. 5Zr0. 5O2 films SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, CD Young, L Colombo, ... Applied Physics Letters 112 (17), 2018 | 133 | 2018 |
| Low-voltage operation and high endurance of 5-nm ferroelectric Hf0. 5Zr0. 5O2 capacitors SJ Kim, J Mohan, HS Kim, J Lee, CD Young, L Colombo, SR Summerfelt, ... Applied Physics Letters 113 (18), 2018 | 60 | 2018 |
| A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ... Materials 13 (13), 2968, 2020 | 36 | 2020 |
| Low‐thermal‐budget fluorite‐structure ferroelectrics for future electronic device applications HJ Kim, Y An, YC Jung, J Mohan, JG Yoo, YI Kim, H Hernandez-Arriaga, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100028, 2021 | 32 | 2021 |
| Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic … SJ Kim, J Mohan, JS Lee, HS Kim, J Lee, CD Young, L Colombo, ... ACS applied materials & interfaces 11 (5), 5208-5214, 2019 | 32 | 2019 |
| Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ... Applied Physics Letters 115 (18), 2019 | 30 | 2019 |
| Atomic layer deposition of layered boron nitride for large-area 2D electronics J Lee, AV Ravichandran, J Mohan, L Cheng, AT Lucero, H Zhu, Z Che, ... ACS applied materials & interfaces 12 (32), 36688-36694, 2020 | 25 | 2020 |
| Ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications SJ Kim, J Mohan, CD Young, L Colombo, J Kim, SR Summerfelt, T San 2018 IEEE International Memory Workshop (IMW), 1-4, 2018 | 25 | 2018 |
| Ferroelectric polarization retention with scaling of Hf0. 5Zr0. 5O2 on silicon J Mohan, H Hernandez-Arriaga, YC Jung, T Onaya, CY Nam, EHR Tsai, ... Applied Physics Letters 118 (10), 2021 | 23 | 2021 |
| Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... Applied Physics Letters 117 (23), 2020 | 21 | 2020 |
| Low-thermal-budget (300° C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ... Applied Physics Letters 119 (24), 2021 | 18 | 2021 |
| Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ... Materials 13 (15), 3387, 2020 | 18 | 2020 |
| Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ... APL Materials 9 (3), 2021 | 13 | 2021 |
| Low temperature (400° C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 13 | 2017 |
| Improvement of ferroelectricity and fatigue property of thicker HfxZr1− xO2/ZrO2 bi-layer T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... ECS Transactions 98 (3), 63, 2020 | 11 | 2020 |
| Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for … HS Kim, A Sahota, J Mohan, AT Lucero, Y Chan Jung, M Kim, JS Lee, ... ACS Applied Electronic Materials 3 (5), 2309-2316, 2021 | 9 | 2021 |
| Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant YC Jung, JH Kim, H Hernandez-Arriaga, J Mohan, SM Hwang, DN Le, ... Applied Physics Letters 121 (22), 2022 | 5 | 2022 |
| Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors J Mohan, YC Jung, H Hernandez-Arriaga, JH Kim, T Onaya, A Sahota, ... ACS Applied Electronic Materials 4 (4), 1405-1414, 2022 | 4 | 2022 |
