| Cavity Formation from Inclusions in Ductile Fracture AS Argon, J Im, R Safoglu | 1022 | 1975 |
| Separation of Second Phase Particles in Spheroidized 1045 Steel, Cu-0.6 Pct Cr Alloy, and Maraging Steel in Plastic Straining A Argon, J Im | 429 | 1975 |
| Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon-Vias for 3-D Interconnects SK Ryu, KH Lu, X Zhang, J Im, PS P. S. Ho, R Huang IEEE Trans. Device & Mater. Reliability (TDMR) 11, 35-43, 2011 | 284 | 2011 |
| Thermo-mechanical reliability of 3-D ICs containing through silicon vias KH Lu, X Zhang, SK Ryu, J Im, R Huang, PS Ho 2009 59th Electronic Components and Technology Conference, 630-634, 2009 | 263 | 2009 |
| Investigation of diffusion and electromigration parameters for Cu–Sn intermetallic compounds in Pb-free solders using simulated annealing B Chao, SH Chae, X Zhang, KH Lu, J Im, PS Ho Acta Materialia 55 (8), 2805-2814, 2007 | 257 | 2007 |
| Distribution of Plastic Strain and Negative Pressure in Necked Steel and Copper Bars AS Argon, J Im, A Needleman | 193 | 1975 |
| Thermal stress induced delamination of through silicon vias in 3-D interconnects KH Lu, SK Ryu, Q Zhao, X Zhang, J Im, R Huang, PS Ho 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC …, 2010 | 149 | 2010 |
| Electromigration enhanced intermetallic growth and void formation in Pb-free solder joints B Chao, SH Chae, X Zhang, KH Lu, M Ding, J Im, PS Ho Journal of applied physics 100 (8), 2006 | 138 | 2006 |
| Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects SK Ryu, Q Zhao, M Hecker, HY Son, KY Byun, J Im, PS Ho, R Huang Journal of Applied Physics 111 (6), 2012 | 122 | 2012 |
| Effect of Thermal Stresses on Carrier Mobility and Keep-out Zone around Through-Silicon Vias for 3-D Integration S Ryu, K Lu, T Jiang, J Im, R Huang, PS Ho IEEE Transactions on Device and Materials Reliability, 255-262, 2012 | 122 | 2012 |
| Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique SK Ryu, T Jiang, KH Lu, J Im, HY Son, KY Byun, R Huang, PS Ho Applied Physics Letters 100 (4), 2012 | 121 | 2012 |
| Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias T Jiang, SK Ryu, Q Zhao, J Im, R Huang, PS Ho Microelectronics Reliability 53 (1), 53-62, 2013 | 117 | 2013 |
| Thickness Effects in Microlayer Composites of Polycarbonate and Poly(Styrene-Acrylonitrile) M Ma, K Vijayan, A Hiltner, E Baer, J Im | 116 | 1990 |
| Thermosetting Polymer Coating with Low Dielectric Constant and High Thermal Stability for ULSI Interlayer Dielectric P Townsend, S Martin, J Godschalx, D Romer, D Smith, D Castillo, ... MRS Symposium Proceedings 476, 1997 | 81* | 1997 |
| Plasticity mechanism for copper extrusion in through-silicon vias for three-dimensional interconnects T Jiang, C Wu, L Spinella, J Im, N Tamura, M Kunz, HY Son, B Gyu Kim, ... Applied Physics Letters 103 (21), 2013 | 76 | 2013 |
| Through-silicon via stress characteristics and reliability impact on 3D integrated circuits T Jiang, J Im, R Huang, PS Ho Mrs Bulletin 40 (3), 248-256, 2015 | 69 | 2015 |
| Deformation Behaviour of Coextruded Multi-layer Composites with Polycarbonate and Poly(Styrene-Acrylonitrile) BL Gregory, A Siegmann, J Im, A Hiltner, E Baer | 69 | 1987 |
| Effects of Sn grain structure on the electromigration of Sn–Ag solder joints Y Wang, KH Lu, V Gupta, L Stiborek, D Shirley, SH Chae, J Im, PS Ho Journal of Materials Research 27 (8), 1131-1141, 2012 | 68 | 2012 |
| Stress Intensity Factors for Anisotropic Fracture Test Specimens of Several Geometries JF Mandell, FJ McGarry, SS Wang, J Im J. of Composite Materials 8, 106-116, 1974 | 68 | 1974 |
| On the Mechanical Reliability of Photo-BCB-Based Dielectric Polymer for Electronic Packaging Applications J Im, EO Shaffer, T Stokich, A Strandjord, J Hetzner, J Curphy, C Karas, ... ASME J. Electronic Packaging, Transactions of the ASME 122(1), 28-33, 2000 | 63* | 2000 |
