Leonard F. Register
Leonard F. Register
Professor of Electrical and Computer Engineering
Verified email at austin.utexas.edu
Title
Cited by
Cited by
Year
Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
LF Register, E Rosenbaum, K Yang
Applied physics letters 74 (3), 457-459, 1999
3061999
Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device
SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald
IEEE Electron Device Letters 30 (2), 158-160, 2008
2702008
Mechanism of stress-induced leakage current in MOS capacitors
E Rosenbaum, LF Register
IEEE Transactions on Electron Devices 44 (2), 317-323, 1997
2431997
Graphene field-effect transistors
D Reddy, LF Register, GD Carpenter, SK Banerjee
Journal of Physics D: Applied Physics 44 (31), 313001, 2011
1692011
Gate-tunable resonant tunneling in double bilayer graphene heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
1522015
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
1512015
Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
D Basu, MJ Gilbert, LF Register, SK Banerjee, AH MacDonald
Applied Physics Letters 92 (4), 042114, 2008
1422008
Graphene for CMOS and beyond CMOS applications
SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ...
Proceedings of the IEEE 98 (12), 2032-2046, 2010
1042010
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 141603, 2014
762014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
752014
Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs
S Mudanai, LF Register, AF Tasch, SK Banerjee
IEEE Electron Device Letters 22 (3), 145-147, 2001
742001
Trap-assisted tunneling current through ultra-thin oxide
J Wu, LF Register, E Rosenbaum
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
741999
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures
GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ...
Physical review letters 120 (17), 177702, 2018
722018
Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability
Q Ouyang, XD Chen, S Mudanai, DL Kencke, X Wang, AF Tasch, ...
2000 International Conference on Simulation Semiconductor Processes and …, 2000
672000
Microscopic basis for a sum rule for polar-optical-phonon scattering of carriers in heterostructures
LF Register
Physical Review B 45 (15), 8756, 1992
671992
Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
622015
Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime
K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli
Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998
581998
Theory of channel hot-carrier degradation in MOSFETs
K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ...
Physica B: Condensed Matter 272 (1-4), 527-531, 1999
561999
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 223509, 2013
552013
Interfacial defect states in HfO/sub 2/and ZrO/sub 2/nMOS capacitors
S Mudanai, F Li, SB Samavedam, PJ Tobin, CS Kang, R Nieh, JC Lee, ...
IEEE Electron Device Letters 23 (12), 728-730, 2002
522002
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Articles 1–20