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Karthik Balakrishnan
Karthik Balakrishnan
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Cited by
Year
System and method for providing locale-specific interpretation of text data
S Boxberger-Oberoi, L Cong
US Patent App. 10/043,878, 2004
1262004
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
S Bangsaruntip, K Balakrishnan, SL Cheng, J Chang, M Brink, I Lauer, ...
2013 IEEE international electron devices meeting, 20.2. 1-20.2. 4, 2013
1182013
Fabrication of nano-sheet transistors with different threshold voltages
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,653,289, 2017
862017
Stacked complementary fets featuring vertically stacked horizontal nanowires
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,837,414, 2017
752017
Vertical transistor with air gap spacers
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,443,982, 2016
672016
Channel-last replacement metal-gate vertical field effect transistor
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,525,064, 2016
632016
Wire congestion and thermal aware 3D global placement
K Balakrishnan, V Nanda, S Easwar, SK Lim
Proceedings of the 2005 Asia and South Pacific Design Automation Conference …, 2005
612005
Replacement III-V or germanium nanowires by unilateral confined epitaxial growth
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,570,551, 2017
602017
Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,773,913, 2017
582017
Variation
DS Boning, K Balakrishnan, H Cai, N Drego, A Farahanchi, KM Gettings, ...
IEEE Transactions on Semiconductor Manufacturing 21 (1), 63-71, 2008
562008
Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs
V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015
482015
Effects of upstream pipe fittings on the performance of orifice and conical flowmeters
SV Prabu, R Mascomani, K Balakrishnan, MS Konnur
Flow Measurement and Instrumentation 7 (1), 49-54, 1996
431996
High-mobility high-Ge-content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å …
P Hashemi, T Ando, K Balakrishnan, J Bruley, S Engelmann, JA Ott, ...
2015 Symposium on VLSI Circuits (VLSI Circuits), T16-T17, 2015
422015
Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices
S Lee, R Wachnik, P Hyde, L Wagner, J Johnson, A Chou, A Kumar, ...
2013 Symposium on VLSI Technology, T248-T249, 2013
412013
Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits
RT Gordon, CE Murray, C Kurter, M Sandberg, SA Hall, K Balakrishnan, ...
Applied Physics Letters 120 (7), 2022
402022
First demonstration of high-Ge-content strained-Si1−xGex(x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and …
P Hashemi, K Balakrishnan, SU Engelmann, JA Ott, A Khakifirooz, ...
2014 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2014
372014
High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
P Hashemi, M Kobayashi, A Majumdar, LA Yang, A Baraskar, ...
2013 Symposium on VLSI Circuits, T18-T19, 2013
342013
Intent Based Dynamic Generation of Personalized Content from Dynamic Sources
J Brunet, Y Chowdhary, K Balakrishnan, K Chan, I Collins
US Patent App. 16/203,756, 2019
332019
A millifluidic reactor system for multistep continuous synthesis of InP/ZnSeS nanoparticles
A Vikram, V Kumar, U Ramesh, K Balakrishnan, N Oh, K Deshpande, ...
ChemNanoMat 4 (9), 943-953, 2018
332018
Stacked nanosheets by aspect ratio trapping
K Balakrishnan, K Cheng, P Hashemi, A Reznicek
US Patent 9,425,291, 2016
332016
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