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Anjan Chakravorty
Anjan Chakravorty
Associate Professor of Electrical Engineering, IIT Madras
Verified email at ee.iitm.ac.in
Title
Cited by
Cited by
Year
Compact hierarchical bipolar transistor modeling with HICUM
A Chakravorty
World Scientific, 2010
107*2010
Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs
A Dey, A Chakravorty, N DasGupta, A DasGupta
IEEE transactions on electron devices 55 (12), 3442-3449, 2008
932008
Analytic estimation of thermal resistance in HBTs
A Chakravorty, R D’Esposito, S Balanethiram, S Frégončse, T Zimmer
IEEE Transactions on Electron Devices 63 (8), 2994-2998, 2016
212016
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
ADD Dwivedi, A Chakravorty, R D’esposito, AK Sahoo, S Fregonese, ...
Solid-State Electronics 115, 1-6, 2016
202016
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit
T Jacquet, G Sasso, A Chakravorty, N Rinaldi, K Aufinger, T Zimmer, ...
Microelectronics Reliability 55 (9-10), 1433-1437, 2015
202015
Compact modeling of high frequency correlated noise in HBTs
P Sakalas, J Herricht, A Chakravorty, M Schroter
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006
202006
Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating
U Radhakrishna, A DasGupta, N DasGupta, A Chakravorty
IEEE transactions on electron devices 58 (11), 4035-4041, 2011
192011
Integrated layout optimized high-g inductors on high-resistivity SOI substrates for RF front-end modules
VNR Vanukuru, A Chakravorty
2014 International Conference on Signal Processing and Communications (SPCOM …, 2014
172014
Accurate modeling of thermal resistance for on-wafer SiGe HBTs using average thermal conductivity
S Balanethiram, A Chakravorty, R D’Esposito, S Fregonese, D Céli, ...
IEEE Transactions on Electron Devices 64 (9), 3955-3960, 2017
162017
High-Q Characteristics of Variable Width Inductors With Reverse Excitation
VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 61 (9), 3350-3354, 2014
162014
Low-frequency noise in advanced SiGe: C HBTs—Part I: Analysis
C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ...
IEEE Transactions on Electron Devices 63 (9), 3649-3656, 2016
152016
Design of novel high-Q multipath parallel-stacked inductor
VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 61 (11), 3905-3909, 2014
142014
Miniaturized millimeter-wave narrow bandpass filter in 0.18 μm CMOS technology using spiral inductors and inter digital capacitors
VNR Vanukuru, N Godavarthi, A Chakravorty
2014 International Conference on Signal Processing and Communications (SPCOM …, 2014
132014
Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors
RR Manikandan, VNR Vanukuru, A Chakravorty, B Amrutur
18th International Symposium on VLSI Design and Test, 1-6, 2014
132014
High density solenoidal series pair symmetric inductors and transformers
VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 61 (7), 2503-2508, 2014
132014
Compact Modeling of Proximity Effect in High- Tapered Spiral Inductors
J Sathyasree, V Vanukuru, D Nair, A Chakravorty
IEEE Electron Device Letters 39 (4), 588-590, 2018
122018
Analysis of high-frequency measurement of transistors along with electromagnetic and SPICE cosimulation
S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ...
IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020
112020
Extraction of BEOL contributions for thermal resistance in SiGe HBTs
S Balanethiram, R D’Esposito, A Chakravorty, S Fregonese, T Zimmer
IEEE Transactions on Electron Devices 64 (3), 1380-1384, 2017
112017
Analysis and modeling of the snapback voltage for varying buried oxide thickness in SOI-LDMOS transistors
KNS Nikhil, N DasGupta, A DasGupta, A Chakravorty
IEEE Transactions on Electron Devices 63 (10), 4003-4010, 2016
112016
Modeling nonquasi-static effects in SiGe HBTs
J Jacob, A DasGupta, M Schröter, A Chakravorty
IEEE Transactions on Electron Devices 57 (7), 1559-1566, 2010
112010
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