Daewoong Kwon
Daewoong Kwon
Inha University
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Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
Spatially resolved steady-state negative capacitance
AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ...
Nature 565 (7740), 468-471, 2019
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ...
IEEE Electron Device Letters 40 (6), 993-996, 2019
Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect
H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 53-54, 2018
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ...
IEEE Electron Device Letters 41 (2), 240-243, 2019
Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor
DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, CJ Kim, BG Park
IEEE Transactions on electron devices 58 (4), 1127-1133, 2011
Response speed of negative capacitance FinFETs
D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 49-50, 2018
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ...
IEEE Electron Device Letters 41 (1), 179-182, 2019
Method of initializing 3D non-volatile memory device
BG Park, DW Kwon, DB Kim, SH Lee
US Patent 9,685,235, 2017
Effects of localized body doping on switching characteristics of tunnel FET inverters with vertical structures
DW Kwon, HW Kim, JH Kim, E Park, J Lee, W Kim, S Kim, JH Lee, ...
IEEE Transactions on Electron Devices 64 (4), 1799-1805, 2017
Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors
JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 41 (11), 1637-1640, 2020
Anomalously beneficial gate-length scaling trend of negative capacitance transistors
YH Liao, D Kwon, YK Lin, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 40 (11), 1860-1863, 2019
A nitrided interfacial oxide for interface state improvement in hafnium zirconium oxide-based ferroelectric transistor technology
AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin
IEEE Electron Device Letters 39 (1), 95-98, 2017
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ...
IEEE Electron Device Letters 40 (9), 1423-1426, 2019
One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon
SS Cheema, N Shanker, CH Hsu, A Datar, J Bae, D Kwon, S Salahuddin
Advanced Electronic Materials 8 (6), 2100499, 2022
Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors
JH Kim, DW Kwon, JS Chang, SW Kim, JC Park, CJ Kim, BG Park
Applied Physics Letters 99 (4), 043502, 2011
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
Capacitive neural network using charge-stored memory cells for pattern recognition applications
D Kwon, IY Chung
IEEE Electron device letters 41 (3), 493-496, 2020
Hole trapping phenomenon at the grain boundary of thin poly-Si floating-body MOSFET and its capacitor-less DRAM application
MH Baek, SH Lee, DW Kwon, JY Seo, BG Park
Journal of Nanoscience and Nanotechnology 17 (5), 2986-2990, 2017
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