Tae-Hyeon Kim

Cited by

	All	Since 2019
Citations	690	641
h-index	16	15
i10-index	25	24

220

110

165

2017201820192020202120222023202413 35 20 61 95 175 207 83

Co-authors

Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityVerified email at snu.ac.kr
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk UniversityVerified email at dongguk.edu
Min-Hwi KimChung-Ang UniversityVerified email at cau.ac.kr
Seongjae ChoDepartment of Electronic and Electrical Engineering, Ewha Womans UniversityVerified email at ewha.ac.kr
Hyungjin KimAssociate Professor, Hanyang UniversityVerified email at hanyang.ac.kr
Sungjoon KimSeoul National UniversityVerified email at snu.ac.kr
Jinwoo ParkHanyang UniversityVerified email at hanyang.ac.kr
Sangwook YounHanyang UniversityVerified email at hanyang.ac.kr
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
Geun Ho LeeInha UniversityVerified email at inha.edu
Shimeng YuGeorgia Institute of Technology, Professor of ECEVerified email at ece.gatech.edu
Sihyun KimSogang UniversityVerified email at sogang.ac.kr
Woo Young ChoiAssociate Professor, Department of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr

Tae-Hyeon Kim

Seoul National University of Science and Tehcnology, Assistant Professor

Verified email at seoultech.ac.kr

Semiconductor Devices Non-volatile Memory In-memory Computing


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Zinc tin oxide synaptic device for neuromorphic engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020	46	2020
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array TH Kim, H Nili, MH Kim, KK Min, BG Park, H Kim Applied Physics Letters 117 (15), 2020	42	2020
Nano-cone resistive memory for ultralow power operation S Kim, S Jung, MH Kim, TH Kim, S Bang, S Cho, BG Park Nanotechnology 28 (12), 125207, 2017	38	2017
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim Chaos, Solitons & Fractals 153, 111587, 2021	36	2021
Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM S Kim, TH Kim, H Kim, BG Park Applied Physics Letters 117 (20), 2020	34	2020
Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM J Park, TH Kim, O Kwon, M Ismail, C Mahata, Y Kim, S Kim, S Kim Nano Energy 104, 107886, 2022	33	2022
4‐bit Multilevel Operation in Overshoot Suppressed Al₂O₃/TiO_x Resistive Random‐Access Memory Crossbar Array S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim Advanced Intelligent Systems 4 (9), 2100273, 2022	30	2022
Ultralow power switching in a silicon-rich SiN y/SiN x double-layer resistive memory device S Kim, YF Chang, MH Kim, S Bang, TH Kim, YC Chen, JH Lee, BG Park Physical Chemistry Chemical Physics 19 (29), 18988-18995, 2017	28	2017
3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system TH Kim, J Lee, S Kim, J Park, BG Park, H Kim Nanotechnology 32 (29), 295201, 2021	27	2021
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application S Bang, MH Kim, TH Kim, DK Lee, S Kim, S Cho, BG Park Solid-State Electronics 150, 60-65, 2018	26	2018
Fabrication and Characterization of TiO_x Memristor for Synaptic Device Application TH Kim, MH Kim, S Bang, DK Lee, S Kim, S Cho, BG Park IEEE Transactions on Nanotechnology 19, 475-480, 2020	25	2020
Uniformity Improvement of SiN_x-Based Resistive Switching Memory by Suppressed Internal Overshoot Current MH Kim, S Kim, S Bang, TH Kim, DK Lee, S Cho, BG Park IEEE Transactions on Nanotechnology 17 (4), 824-828, 2018	23	2018
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory S Kim, YF Chang, MH Kim, TH Kim, Y Kim, BG Park Materials 10 (5), 459, 2017	20	2017
Effect of program error in memristive neural network with weight quantization TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022	19	2022
Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors J Park, TH Kim, S Kim, GH Lee, H Nili, H Kim Chaos, Solitons & Fractals 152, 111388, 2021	19	2021
Multiplexed silicon nanowire tunnel FET-based biosensors with optimized multi-sensing currents S Kim, R Lee, D Kwon, TH Kim, TJ Park, SJ Choi, HS Mo, DH Kim, ... IEEE Sensors Journal 21 (7), 8839-8846, 2021	16	2021
SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory C Mahata, MH Kim, S Bang, TH Kim, DK Lee, YJ Choi, S Kim, BG Park Applied Physics Letters 114 (18), 2019	16	2019
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation DK Lee, MH Kim, TH Kim, S Bang, YJ Choi, S Kim, S Cho, BG Park Solid-State Electronics 154, 31-35, 2019	15	2019
Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory S Kim, CY Lin, MH Kim, TH Kim, H Kim, YC Chen, YF Chang, BG Park Nanoscale Research Letters 13, 1-7, 2018	15	2018
A more hardware-oriented spiking neural network based on leading memory technology and its application with reinforcement learning MH Kim, S Hwang, S Bang, TH Kim, DK Lee, MHR Ansari, S Cho, ... IEEE Transactions on Electron Devices 68 (9), 4411-4417, 2021	14	2021

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