David J klotzkin
David J klotzkin
Verified email at
Cited by
Cited by
High-sensitivity, disposable lab-on-a-chip with thin-film organic electronics for fluorescence detection
A Pais, A Banerjee, D Klotzkin, I Papautsky
Lab on a Chip 8 (5), 794-800, 2008
Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine
Z Yu, W Li, JA Hagen, Y Zhou, D Klotzkin, JG Grote, AJ Steckl
Applied optics 46 (9), 1507-1513, 2007
In (Ga) As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
P Bhattacharya, KK Kamath, J Singh, D Klotzkin, J Phillips, HT Jiang, ...
IEEE Transactions on Electron Devices 46 (5), 871-883, 1999
High-speed modulation and switching characteristics of In (Ga) As-Al (Ga) As self-organized quantum-dot lasers
P Bhattacharya, D Klotzkin, O Qasaimeh, W Zhou, S Krishna, D Zhu
IEEE Journal of Selected Topics in Quantum Electronics 6 (3), 426-438, 2000
45-Mbit/s cat’s-eye modulating retroreflectors
WS Rabinovich, PG Goetz, R Mahon, L Swingen, J Murphy, M Ferraro, ...
Optical Engineering 46 (10), 104001-104001-8, 2007
A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode
H Mu, W Li, R Jones, A Steckl, D Klotzkin
Journal of Luminescence 126 (1), 225-229, 2007
Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers
D Klotzkin, K Kamath, P Bhattacharya
IEEE Photonics Technology Letters 9 (10), 1301-1303, 1997
Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: A comparative study
D Klotzkin, P Bhattacharya
Journal of lightwave technology 17 (9), 1634, 1999
Dependence of film morphology on deposition rate in ITO/TPD/Alq3/Al organic luminescent diodes
H Mu, H Shen, D Klotzkin
Solid-State Electronics 48 (10-11), 2085-2088, 2004
Concentration dependence of fluorescence signal in a microfluidic fluorescence detector
A Banerjee, Y Shuai, R Dixit, I Papautsky, D Klotzkin
Journal of Luminescence 130 (6), 1095-1100, 2010
Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differentialá…
D Klotzkin, K Kamath, K Vineberg, P Bhattacharya, R Murty, J Laskar
IEEE Photonics Technology Letters 10 (7), 932-934, 1998
0.98-/spl mu/m multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth
X Zhang, A Gutierrez-Aitken, D Klotzkin, P Bhattacharya, C Caneau, ...
IEEE Journal of Selected Topics in Quantum Electronics 3 (2), 309-314, 1997
Introduction to semiconductor lasers for optical communications
DJ Klotzkin
Springer International Publishing, 2020
A polarization isolation method for high-sensitivity, low-cost on-chip fluorescence detection for microfluidic lab-on-a-chip
A Banerjee, A Pais, I Papautsky, D Klotzkin
IEEE Sensors Journal 8 (5), 621-627, 2008
A CMOS optical detection system for point-of-use luminescent oxygen sensing
L Shen, M Ratterman, D Klotzkin, I Papautsky
Sensors and actuators B: Chemical 155 (1), 430-435, 2011
Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers
JS Rieh, D Klotzkin, O Qasaimeh, LH Lu, K Yang, LPB Katehi, ...
IEEE Photonics Technology Letters 10 (3), 415-417, 1998
Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq3 in OLED
H Mu, D Klotzkin, A De Silva, HP Wagner, D White, B Sharpton
Journal of Physics D: Applied Physics 41 (23), 235109, 2008
High-speed tunnel-injection quantum well and quantum dot lasers
P Bhattacharya, X Zhang, Y Yuan, KK Kamath, D Klotzkin, C Caneau, ...
Physics and Simulation of Optoelectronic Devices VI 3283, 702-709, 1998
Carrier dynamics in high-speed (f/sub-3 dB/> 40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements
D Klotzkin, X Zhang, P Bhattacharya, C Caneau, R Bhat
IEEE Photonics Technology Letters 9 (5), 578-580, 1997
InP-based 1.5 Ám vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors
H Gebretsadik, PK Bhattacharya, KK Kamath, OR Qasaimeh, DJ Klotzkin, ...
Electronics Letters 34 (13), 1316-1318, 1998
The system can't perform the operation now. Try again later.
Articles 1–20