| Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim Materials 9 (12), 1007, 2016 | 129 | 2016 |
| Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As C Mahata, YC Byun, CH An, S Choi, Y An, H Kim ACS Applied Materials & Interfaces 5 (10), 4195-4201, 2013 | 71 | 2013 |
| Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition YC Byun, S Choi, Y An, PC McIntyre, H Kim ACS Applied Materials & Interfaces 6 (13), 10482-10488, 2014 | 37 | 2014 |
| Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ... ACS applied materials & interfaces 10 (16), 14116-14123, 2018 | 31 | 2018 |
| Thermal Stabilities of ALD-HfO2 Films on HF-and (NH4) 2S-Cleaned InP CH An, YC Byun, MS Lee, H Kim Journal of The Electrochemical Society 158 (12), G242, 2011 | 25 | 2011 |
| Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants YC Byun, C Mahata, CH An, J Oh, R Choi, H Kim Journal of Physics D: Applied Physics 45 (43), 435305, 2012 | 18 | 2012 |
| High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment MWH Ogyun Seok, Min-Koo Han, Young-Chul Byun, Jiyoung Kim, Hyun-Chang Shin Solid-State Electronics 103, 49-53, 2015 | 15 | 2015 |
| Low temperature (100° C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si YC Byun, JG Lee, X Meng, JS Lee, AT Lucero, SJ Kim, CD Young, MJ Kim, ... Applied Physics Letters 111 (8), 2017 | 14 | 2017 |
| Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO2 on InP CH An, YC Byun, MS Lee, H Kim physica status solidi (RRL)–Rapid Research Letters 6 (5), 211-213, 2012 | 13 | 2012 |
| Atomic-layer-deposited (HfO2) 1− x (Al2O3) x nanolaminate films on InP with different Al2O3 contents CH An, C Mahata, YC Byun, H Kim Journal of Physics D: Applied Physics 46 (27), 275301, 2013 | 12 | 2013 |
| In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As JK Antonio T. Lucero, Young-Chul Byun , Xiaoye Qin, Lanxia Cheng, Hyoungsub ... Electronic Materials Letters 11 (5), 769, 2015 | 10* | 2015 |
| Thermal stability of ALD-HfO2/GaAs pretreated with trimethylaluminium YC Byun, CH An, SH Lee, MH Cho, H Kim Journal of the Electrochemical Society 159 (1), G6, 2011 | 10 | 2011 |
| Interfacial self-cleaning during PEALD HfO2 process on GaAs using TDMAH/O2 with different (NH4) 2S cleaning time YC Byun, CH An, JY Choi, CY Kim, MH Cho, H Kim Journal of the Electrochemical Society 158 (6), G141, 2011 | 10 | 2011 |
| Electrical and band structural analyses of Ti1− xAlxOy films grown by atomic layer deposition on p-type GaAs Y An, C Mahata, C Lee, S Choi, YC Byun, YS Kang, T Lee, J Kim, MH Cho, ... Journal of Physics D: Applied Physics 48 (41), 415302, 2015 | 8 | 2015 |
| Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics S Choi, Y An, C Lee, J Song, MC Nguyen, YC Byun, R Choi, PC McIntyre, ... Scientific Reports 7 (1), 9769, 2017 | 7 | 2017 |
| Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer CH An, YC Byun, MH Cho, H Kim physica status solidi (RRL)–Rapid Research Letters 6 (6), 247-249, 2012 | 7 | 2012 |
| Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP C Mahata, Y An, S Choi, YC Byun, DK Kim, T Lee, J Kim, MH Cho, H Kim Current Applied Physics 16 (3), 294-299, 2016 | 6 | 2016 |
| Electrical characteristics of HfO2 films on InP with different atomic‐layer‐deposition temperatures CH An, C Mahata, YC Byun, MS Lee, YS Kang, MH Cho, H Kim physica status solidi (a) 210 (7), 1381-1385, 2013 | 6 | 2013 |
| Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films JK T.J. Park, Y.C. Byun, R. M. Wallace The Journal of Chemical Physics 146 (5), 052821, 2017 | 5 | 2017 |
| Starting layer dependence of the atomic-layer-deposited HfAlOx films on GaAs YC Byun, C Mahata, CH An, H Kim Semiconductor Science and Technology 27 (10), 105026, 2012 | 4 | 2012 |
Chandreswar MahataResearch Professor, Division of Electronics and Electrical Engineering, Dongguk University,RepublicVerified email at dongguk.edu
