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Sangheon Oh
Sangheon Oh
Verified email at sandia.gov
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Cited by
Year
Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
Y Shi, L Nguyen, S Oh, X Liu, F Koushan, JR Jameson, D Kuzum
Nature communications 9 (1), 5312, 2018
1092018
Energy-efficient Mott activation neuron for full-hardware implementation of neural networks
S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang, Y Kalcheim, IK Schuller, ...
Nature nanotechnology 16 (6), 680-687, 2021
1032021
A soft-pruning method applied during training of spiking neural networks for in-memory computing applications
Y Shi, L Nguyen, S Oh, X Liu, D Kuzum
Frontiers in neuroscience 13, 438484, 2019
482019
The impact of resistance drift of phase change memory (PCM) synaptic devices on artificial neural network performance
S Oh, Z Huang, Y Shi, D Kuzum
IEEE Electron Device Letters 40 (8), 1325-1328, 2019
402019
Drift-enhanced unsupervised learning of handwritten digits in spiking neural network with PCM synapses
S Oh, Y Shi, X Liu, J Song, D Kuzum
IEEE Electron Device Letters 39 (11), 1768-1771, 2018
352018
Performance prospects of deeply scaled spin-transfer torque magnetic random-access memory for in-memory computing
Y Shi, S Oh, Z Huang, X Lu, SH Kang, D Kuzum
IEEE Electron Device Letters 41 (7), 1126-1129, 2020
282020
3-D quasi-atomistic model for line edge roughness in nonplanar MOSFETs
S Oh, C Shin
IEEE Transactions on Electron Devices 63 (12), 4617-4623, 2016
232016
Design for variation-immunity in sub-10-nm stacked-nanowire FETs to suppress LER-induced random variations
J Park, H Lee, S Oh, C Shin
IEEE Transactions on Electron Devices 63 (12), 5048-5054, 2016
152016
Adaptive quantization as a device-algorithm co-design approach to improve the performance of in-memory unsupervised learning with SNNs
Y Shi, Z Huang, S Oh, N Kaslan, J Song, D Kuzum
IEEE Transactions on Electron Devices 66 (4), 1722-1728, 2019
112019
Capacitance matching effects in negative capacitnace field effect transistor
J Jo, AI Khan, K Cho, S Oh, S Salahuddin, C Shin
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 174-175, 2016
82016
High Throughput Neuromorphic Brain Interface with CuOx Resistive Crossbars for Real-time Spike Sorting
Y Shi, A Ananthakrishnan, S Oh, X Liu, G Hota, G Cauwenberghs, ...
2021 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2021
62021
A neuromorphic brain interface based on RRAM crossbar arrays for high throughput real-time spike sorting
Y Shi, A Ananthakrishnan, S Oh, X Liu, G Hota, G Cauwenberghs, ...
IEEE transactions on electron devices 69 (4), 2137-2144, 2021
52021
Worst case sampling method with confidence ellipse for estimating the impact of random variation on static random access memory (SRAM)
S Oh, J Jo, H Lee, GS Lee, JD Park, C Shin
JSTS: Journal of Semiconductor Technology and Science 15 (3), 374-380, 2015
52015
Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware
Y Shi, S Oh, J Park, J del Valle, P Salev, IK Schuller, D Kuzum
Neuromorphic Computing and Engineering 3 (3), 034007, 2023
22023
A Versatile and Efficient Neuromorphic Platform for Compute-in-Memory with Selector-less Memristive Crossbars
S Jain, G Hota, Y Shi, S Oh, J Wu, P Fowler, D Kuzum, G Cauwenberghs
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2023
12023
Energy Efficient Hardware Implementation of Neural Networks Using Emerging Non-Volatile Memory Devices
S Oh
University of California, San Diego, 2023
12023
Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge
J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi, S Jain, G Hota, E Qiu, ...
Nature Communications 15 (1), 3492, 2024
2024
Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation
RM Gurrola, JM Cain, S Oh, TD Brown, F Jardali, RM Schoell, DR Yadav, ...
Journal of Applied Physics 135 (12), 2024
2024
Bayesian Neural Network Implemented by Dynamically Programmable Noise in Vanadium Oxide
S Oh, TP Xiao, C Bennett, AJ Weiss, SR Bishop, PS Finnegen, EJ Fuller, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge
J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi, S Jain, G Hota, AL Nagle, ...
arXiv preprint arXiv:2310.13844, 2023
2023
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