| Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019 | 696 | 2019 |
| High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015 | 226 | 2015 |
| Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 179 | 2015 |
| Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016 | 175 | 2016 |
| Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee Acs Nano 9 (1), 363-370, 2015 | 175 | 2015 |
| Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ... Advanced Materials 28 (9), 1818-1823, 2016 | 165 | 2016 |
| Radio frequency transistors and circuits based on CVD MoS2 A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ... Nano letters 15 (8), 5039-5045, 2015 | 153 | 2015 |
| Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018 | 92 | 2018 |
| Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ... Applied Physics Letters 106 (6), 062101, 2015 | 79 | 2015 |
| Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 163118, 2013 | 79 | 2013 |
| Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ... ACS nano 11 (5), 4832-4839, 2017 | 78 | 2017 |
| Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015 | 54 | 2015 |
| Activation of a nickel-based oxygen evolution reaction catalyst on a hematite photoanode via incorporation of cerium for photoelectrochemical water oxidation H Lim, JY Kim, EJ Evans, A Rai, JH Kim, BR Wygant, CB Mullins ACS applied materials & interfaces 9 (36), 30654-30661, 2017 | 46 | 2017 |
| Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015 | 44* | 2015 |
| Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano Letters 16 (8), 4975-4981, 2016 | 38 | 2016 |
| Characteristics and mechanism study of cerium oxide based random access memories CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee Applied Physics Letters 106 (17), 173108, 2015 | 37 | 2015 |
| Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 223111, 2014 | 33 | 2014 |
| Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ... Nano letters 19 (3), 1976-1981, 2019 | 27 | 2019 |
| Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018 | 25 | 2018 |
| Towards band structure and band offset engineering of monolayer Mo (1− x) W (x) S2 via Strain JS Kim, R Ahmad, T Pandey, A Rai, S Feng, J Yang, Z Lin, M Terrones, ... 2D Materials 5 (1), 015008, 2017 | 23 | 2017 |
Hema C. P. MovvaIntel CorporationVerified email at intel.com
