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Farzaneh Izadinasab
Farzaneh Izadinasab
Unknown affiliation
Verified email at nit.ac.ir
Title
Cited by
Cited by
Year
A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab, M Gholipour
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1606-1616, 2022
452022
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
E Abbasian, M Gholipour, F Izadinasab
International Journal of Circuit Theory and Applications 49 (11), 3630-3652, 2021
202021
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology
F Izadinasab, M Gholipour
Microelectronics Journal 113, 105100, 2021
132021
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Articles 1–3