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Gustaaf Borghs
Gustaaf Borghs
Physics Department KULeuven
Verified email at fys.kuleuven.be
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Cited by
Year
Silane ligand exchange to make hydrophobic superparamagnetic nanoparticles water-dispersible
R De Palma, S Peeters, MJ Van Bael, H Van den Rul, K Bonroy, ...
Chemistry of Materials 19 (7), 1821-1831, 2007
6662007
Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor
A Van Esch, L Van Bockstal, J De Boeck, G Verbanck, ...
Physical Review B 56 (20), 13103, 1997
5161997
Biosensing based on light absorption of nanoscaled gold and silver particles
F Frederix, JM Friedt, KH Choi, W Laureyn, A Campitelli, D Mondelaers, ...
Analytical chemistry 75 (24), 6894-6900, 2003
4612003
Experimental separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells
SD Ganichev, VV Bel’kov, LE Golub, EL Ivchenko, P Schneider, ...
Physical review letters 92 (25), 256601, 2004
4382004
Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
VF Motsnyi, J De Boeck, J Das, W Van Roy, G Borghs, E Goovaerts, ...
Applied Physics Letters 81 (2), 265-267, 2002
4212002
Electrical detection of confined gap plasmons in metal–insulator–metal waveguides
P Neutens, P Van Dorpe, I De Vlaminck, L Lagae, G Borghs
Nature Photonics 3 (5), 283-286, 2009
4172009
Specific cell targeting with nanobody conjugated branched gold nanoparticles for photothermal therapy
B Van de Broek, N Devoogdt, A D’Hollander, HL Gijs, K Jans, L Lagae, ...
ACS nano 5 (6), 4319-4328, 2011
4142011
Multifunctional nanomechanical systems via tunably coupled piezoelectric actuation
SC Masmanidis, RB Karabalin, I De Vlaminck, G Borghs, MR Freeman, ...
Science 317 (5839), 780-783, 2007
3682007
Nanometer‐scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy
J De Boeck, R Oesterholt, A Van Esch, H Bender, C Bruynseraede, ...
Applied Physics Letters 68 (19), 2744-2746, 1996
3171996
Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
P Heremans, M Kuijk, R Windisch, G Borghs
US Patent 6,504,180, 2003
3072003
Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
JP Heida, BJ Van Wees, JJ Kuipers, TM Klapwijk, G Borghs
Physical Review B 57 (19), 11911, 1998
2811998
Improvement of AlGaN∕ GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer
J Derluyn, S Boeykens, K Cheng, R Vandersmissen, J Das, ...
Journal of Applied Physics 98 (5), 2005
2642005
Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage
P Srivastava, J Das, D Visalli, J Derluyn, M Van Hove, PE Malinowski, ...
IEEE Electron Device Letters 31 (8), 851-853, 2010
2522010
Synthesis of well-ordered nanopores by anodizing aluminum foils in sulfuric acid
GD Sulka, S Stroobants, V Moshchalkov, G Borghs, JP Celis
Journal of the Electrochemical Society 149 (7), D97, 2002
2272002
Band‐gap narrowing in highly doped n‐ and p‐type GaAs studied by photoluminescence spectroscopy
G Borghs, K Bhattacharyya, K Deneffe, P Van Mieghem, R Mertens
Journal of applied physics 66 (9), 4381-4386, 1989
2151989
Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors
C Bartic, H Jansen, A Campitelli, S Borghs
Organic electronics 3 (2), 65-72, 2002
2112002
Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes
R Windisch, P Heremans, A Knobloch, P Kiesel, GH Döhler, B Dutta, ...
Applied Physics Letters 74 (16), 2256-2258, 1999
2071999
Field-effect detection of chemical species with hybrid organic/inorganic transistors
C Bartic, A Campitelli, S Borghs
Applied Physics Letters 82 (3), 475-477, 2003
2062003
Ohmic contact formation on n-type Ge
RR Lieten, S Degroote, M Kuijk, G Borghs
Applied Physics Letters 92 (2), 2008
2042008
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
R Windisch, B Dutta, M Kuijk, A Knobloch, S Meinlschmidt, S Schoberth, ...
IEEE Transactions on Electron Devices 47 (7), 1492-1498, 2000
2042000
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