| Continuous process of carbon nanotubes synthesis by decomposition of methane using an arc-jet plasma SI Choi, JS Nam, JI Kim, TH Hwang, JH Seo, SH Hong Thin Solid Films 506, 244-249, 2006 | 44 | 2006 |
| High purity synthesis of carbon nanotubes by methane decomposition using an arc-jet plasma SI Choi, JS Nam, CM Lee, SS Choi, JI Kim, JM Park, SH Hong Current Applied Physics 6 (2), 224-229, 2006 | 44 | 2006 |
| Low frequency noise characteristics in multilayer WSe2 field effect transistor IT Cho, JI Kim, Y Hong, J Roh, H Shin, GW Baek, C Lee, BH Hong, SH Jin, ... Applied Physics Letters 106 (2), 2015 | 39 | 2015 |
| A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization CY Jeong, D Lee, SH Song, JI Kim, JH Lee, HI Kwon Semiconductor Science and Technology 29 (4), 045023, 2014 | 32 | 2014 |
| Enthalpy probe measurements and three-dimensional modelling on air plasma jets generated by a non-transferred plasma torch with hollow electrodes KS Kim, JM Park, S Choi, J Kim, SH Hong Journal of Physics D: Applied Physics 41 (6), 065201, 2008 | 30 | 2008 |
| Effect of temperature and electric field on degradation in amorphous InGaZnO TFTs under positive gate and drain bias stress JI Kim, IT Cho, SM Joe, CY Jeong, D Lee, HI Kwon, SH Jin, JH Lee IEEE electron device letters 35 (4), 458-460, 2014 | 26 | 2014 |
| Comparative study of two-and three-dimensional modeling on arc discharge phenomena inside a thermal plasma torch with hollow electrodes KS Kim, JM Park, S Choi, J Kim, SH Hong Physics of Plasmas 15 (2), 2008 | 25 | 2008 |
| Low-frequency noise properties in double-gate amorphous InGaZnO thin-film transistors fabricated by back-channel-etch method CY Jeong, JI Kim, JH Lee, JG Um, J Jang, HI Kwon IEEE Electron Device Letters 36 (12), 1332-1335, 2015 | 21 | 2015 |
| Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors CY Jeong, HJ Kim, JI Kim, JH Lee, HI Kwon Journal of Vacuum Science & Technology B 34 (6), 2016 | 20 | 2016 |
| Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses D Lee, CY Jeong, SH Song, J Xiao-Shi, JI Kim, JH Lee, HI Kwon Journal of Vacuum Science & Technology B 33 (1), 2015 | 20 | 2015 |
| Local-degradation-induced threshold voltage shift in turned-off amorphous InGaZnO thin film transistors under AC drain bias stress JI Kim, IT Cho, CY Jeong, D Lee, HI Kwon, KD Jung, MS Park, MS Seo, ... IEEE Electron Device Letters 36 (6), 579-581, 2015 | 16 | 2015 |
| Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors JI Kim, KS Chang, DU Kim, IT Cho, CY Jeong, D Lee, HI Kwon, SH Jin, ... Applied Physics Letters 105 (4), 2014 | 14 | 2014 |
| Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors CY Jeong, D Lee, SH Song, JI Kim, JH Lee, JG Um, J Jang, HI Kwon Journal of Vacuum Science & Technology B 33 (3), 2015 | 6 | 2015 |
| Modeling of asymmetric degradation based on a non-uniform electric field and temperature in amorphous In–Ga–Zn–O thin film transistors JI Kim, CY Jeong, HI Kwon, KD Jung, MS Park, KH Kim, MS Seo, JH Lee Semiconductor Science and Technology 32 (3), 035017, 2017 | 3 | 2017 |
