Charging effects in silicon nanocrystals within layers, fabricated by chemical vapor deposition, oxidation, and annealing DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou Applied physics letters 82 (3), 397-399, 2003 | 145 | 2003 |
Photoluminescence from nanocrystalline silicon in superlattices P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos Applied Physics Letters 76 (24), 3588-3590, 2000 | 133 | 2000 |
High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane DN Kouvatsos, AT Voutsas, MK Hatalis IEEE Transactions on Electron Devices 43 (9), 1399-1406, 1996 | 59 | 1996 |
Fluorine‐Enhanced Oxidation of Silicon: Effects of Fluorine on Oxide Stress and Growth Kinetics D Kouvatsos, JG Huang, RJ Jaccodine Journal of the Electrochemical Society 138 (6), 1752, 1991 | 50 | 1991 |
Photo-and electroluminescence from nanocrystalline silicon single and multilayer structures P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos Materials Science and Engineering: B 69, 345-349, 2000 | 46 | 2000 |
Nickel nanoparticle deposition at room temperature for memory applications E Verrelli, D Tsoukalas, K Giannakopoulos, D Kouvatsos, P Normand, ... Microelectronic engineering 84 (9-10), 1994-1997, 2007 | 35 | 2007 |
Interface state density reduction and effect of oxidation temperature on fluorine incorporation and profiling for fluorinated metal oxide semiconductor capacitors DN Kouvatsos, FA Stevie, RJ Jaccodine Journal of the Electrochemical Society 140 (4), 1160, 1993 | 29 | 1993 |
Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates DN Kouvatsos, AT Voutsas, MK Hatalis Journal of electronic materials 28, 19-25, 1999 | 28 | 1999 |
Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2 V Ioannou-Sougleridis, B Kamenev, DN Kouvatsos, AG Nassiopoulou Materials Science and Engineering: B 101 (1-3), 324-328, 2003 | 27 | 2003 |
Characterization of various low-k dielectrics for possible use in applications at temperatures below 160° C M Vasilopoulou, S Tsevas, AM Douvas, P Argitis, D Davazoglou, ... Journal of Physics: Conference Series 10 (1), 218, 2005 | 23 | 2005 |
Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors V Davidović, DN Kouvatsos, N Stojadinović, AT Voutsas Microelectronics Reliability 47 (9-11), 1841-1845, 2007 | 20 | 2007 |
Charging effects in silicon nanocrystals embedded in SiO2 films DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou Materials Science and Engineering: B 101 (1-3), 270-274, 2003 | 20 | 2003 |
Effect of silicon thickness on the degradation mechanisms of sequential laterally solidified polycrystalline silicon TFTs during hot-carrier stress AT Voutsas, DN Kouvatsos, L Michalas, GJ Papaioannou IEEE electron device letters 26 (3), 181-184, 2005 | 18 | 2005 |
Silicon‐fluorine bonding and fluorine profiling in SiO2 films grown by NF3‐enhanced oxidation D Kouvatsos, FP McCluskey, RJ Jaccodine, FA Stevie Applied physics letters 61 (7), 780-782, 1992 | 17 | 1992 |
Short channel effects on LTPS TFT degradation DC Moschou, CG Theodorou, NA Hastas, A Tsormpatzoglou, ... Journal of Display Technology 9 (9), 747-754, 2012 | 16 | 2012 |
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200° C M Vasilopoulou, AM Douvas, D Kouvatsos, P Argitis, D Davazoglou Microelectronics Reliability 45 (5-6), 990-993, 2005 | 16 | 2005 |
Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665° C strain point glass substrates MK Hatalis, DN Kouvatsos, JH Kung, AT Voutsas, J Kanicki Thin solid films 338 (1-2), 281-285, 1999 | 16 | 1999 |
Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films DN Kouvatsos, FV Farmakis, DC Moschou, GP Kontogiannopoulos, ... Solid-state electronics 51 (6), 936-940, 2007 | 15 | 2007 |
Fluorine‐enhanced oxidation of polycrystalline silicon and application to thin‐film transistor fabrication DN Kouvatsos, MK Hatalis, RJ Jaccodine Applied physics letters 61 (8), 937-939, 1992 | 14 | 1992 |
SiO2 Film Stress—Thickness Dependence, Non‐Planar Oxidation, and Fluorine‐Related Effects D Kouvatsos, JG Huang, V Saikumar, PJ Macfarlane, RJ Jaccodine, ... Journal of the Electrochemical Society 139 (8), 2322, 1992 | 14 | 1992 |