| Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors B Ku, Y Abbas, AS Sokolov, C Choi Journal of Alloys and Compounds 735, 1181-1188, 2018 | 102 | 2018 |
| The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon, B Ku, CJ Kang, ... Nanoscale 12 (26), 14120-14134, 2020 | 101 | 2020 |
| Compliance-free, digital SET and analog RESET synaptic characteristics of sub-tantalum oxide based neuromorphic device Y Abbas, YR Jeon, AS Sokolov, S Kim, B Ku, C Choi Scientific reports 8 (1), 1228, 2018 | 101 | 2018 |
| Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure AS Sokolov, YR Jeon, S Kim, B Ku, D Lim, H Han, MG Chae, J Lee, ... Applied Surface Science 434, 822-830, 2018 | 98 | 2018 |
| Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device AS Sokolov, YR Jeon, S Kim, B Ku, C Choi NPG Asia Materials 11 (1), 5, 2019 | 60 | 2019 |
| Study of in situ silver migration in amorphous boron nitride CBRAM device YR Jeon, Y Abbas, AS Sokolov, S Kim, B Ku, C Choi ACS applied materials & interfaces 11 (26), 23329-23336, 2019 | 57 | 2019 |
| Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device S Kim, Y Abbas, YR Jeon, AS Sokolov, B Ku, C Choi Nanotechnology 29 (41), 415204, 2018 | 55 | 2018 |
| Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film D Kim, YR Jeon, B Ku, C Chung, TH Kim, S Yang, U Won, T Jeong, ... ACS Applied Materials & Interfaces 13 (44), 52743-52753, 2021 | 44 | 2021 |
| Two-terminal artificial synapse with hybrid organic–inorganic perovskite (CH3NH3) PbI3 and low operating power energy (∼ 47 fJ/μm2) B Ku, B Koo, AS Sokolov, MJ Ko, C Choi Journal of Alloys and Compounds 833, 155064, 2020 | 44 | 2020 |
| Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse AS Sokolov, YR Jeon, B Ku, C Choi Journal of Alloys and Compounds 822, 153625, 2020 | 42 | 2020 |
| Cellulose nanocrystal based Bio‐Memristor as a green artificial synaptic device for neuromorphic computing applications T Hussain, H Abbas, C Youn, H Lee, T Boynazarov, B Ku, YR Jeon, ... Advanced Materials Technologies 7 (2), 2100744, 2022 | 39 | 2022 |
| Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing Y Abbas, AS Sokolov, YR Jeon, S Kim, B Ku, C Choi Journal of Alloys and Compounds 759, 44-51, 2018 | 35 | 2018 |
| Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface B Ku, Y Abbas, S Kim, AS Sokolov, YR Jeon, C Choi Journal of Alloys and Compounds 797, 277-283, 2019 | 30 | 2019 |
| Fast thermal quenching on the ferroelectric Al: HfO2 thin film with record polarization density and flash memory application B Ku, S Choi, Y Song, C Choi 2020 IEEE symposium on VLSI technology, 1-2, 2020 | 25 | 2020 |
| Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device D Lee, AS Sokolov, B Ku, YR Jeon, HT Kim, GH Kim, C Choi Applied Surface Science 547, 149140, 2021 | 16 | 2021 |
| Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films B Ku, YR Jeon, M Choi, C Chung, C Choi Applied Surface Science 601, 154039, 2022 | 9 | 2022 |
| Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling time B Ku, Y Shin, Y Lee, T Kim, C Choi Applied Surface Science 599, 153905, 2022 | 9 | 2022 |
| Room-temperature stable CsPbI3 perovskite quantum dots prepared by layer-by-layer assembly for photonic synapse B Ku, B Koo, W Kim, Y Kim, YR Jeon, MJ Ko, C Choi Journal of Alloys and Compounds 960, 170459, 2023 | 3 | 2023 |
| Photo-synaptic properties of CH3NH3Pb1-xMnxBr2x+ 1 hybrid perovskite thin film-based artificial synapse YR Jeon, D Lee, HB Cho, B Ku, WB Im, C Choi Ceramics International 49 (7), 11140-11148, 2023 | 3 | 2023 |
| Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film B Ku, Y Ma, H Han, W Xuan, C Choi Nanotechnology 33 (42), 425205, 2022 | 1 | 2022 |
