Byung Gook Park
Byung Gook Park
Professor of Electrical Engineering, Seoul National University
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Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
WY Choi, BG Park, JD Lee, TJK Liu
IEEE Electron Device Letters 28 (8), 743-745, 2007
Three-dimensional NAND flash architecture design based on single-crystalline stacked array
Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ...
IEEE Transactions on Electron Devices 59 (1), 35-45, 2011
Demonstration of L-shaped tunnel field-effect transistors
SW Kim, JH Kim, TJK Liu, WY Choi, BG Park
IEEE transactions on electron devices 63 (4), 1774-1778, 2015
Single-crystalline Si stacked array (STAR) NAND flash memory
JG Yun, G Kim, JE Lee, Y Kim, WB Shim, JH Lee, H Shin, JD Lee, ...
IEEE Transactions on Electron Devices 58 (4), 1006-1014, 2011
RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs
S Cho, KR Kim, BG Park, IM Kang
IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
The analysis of dark signals in the CMOS APS imagers from the characterization of test structures
HI Kwon, IM Kang, BG Park, JD Lee, SS Park
IEEE Transactions on Electron Devices 51 (2), 178-184, 2004
Multilevel vertical-channel SONOS nonvolatile memory on SOI
YK Lee, JS Sim, SK Sung, CJ Lee, TH Kim, JD Lee, BG Park, DH Lee, ...
IEEE Electron Device Letters 23 (11), 664-666, 2002
Design guideline of Si-based L-shaped tunneling field-effect transistors
SW Kim, WY Choi, MC Sun, HW Kim, BG Park
Japanese Journal of Applied Physics 51 (6S), 06FE09, 2012
Semiconductor devices and methods of driving the same
JH Oh, KC Ryoo, B Park, K Oh, IG Baek
US Patent 8,472,237, 2013
Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly (vinyl alcohol) gate insulator
CA Lee, DW Park, SH Jin, IH Park, JD Lee, BG Park
Applied Physics Letters 88 (25), 252102, 2006
Design optimization of gate-all-around (GAA) MOSFETs
JY Song, WY Choi, JH Park, JD Lee, BG Park
IEEE Transactions on Nanotechnology 5 (3), 186-191, 2006
70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs)
WY Choi, JY Song, JD Lee, YJ Park, BG Park
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors
S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang
IEEE transactions on electron devices 58 (12), 4164-4171, 2011
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power …
S Kim, S Jung, MH Kim, S Cho, BG Park
Applied Physics Letters 106 (21), 212106, 2015
Semiconductor devices having vertical device and non-vertical device and methods of forming the same
M Sun, B Park
US Patent 9,087,922, 2015
Pentacene OTFTs with PVA gate insulators on a flexible substrate
SH Jin, JS Yu, CA Lee, JW Kim, BG Park, JD Lee
Journal-Korean Physical Society 44, 181-184, 2004
100-nm n-/p-channel I-MOS using a novel self-aligned structure
WY Choi, JY Song, JD Lee, YJ Park, BG Park
IEEE electron device letters 26 (4), 261-263, 2005
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
Silicon-based floating-body synaptic transistor with frequency-dependent short-and long-term memories
H Kim, J Park, MW Kwon, JH Lee, BG Park
IEEE Electron Device Letters 37 (3), 249-252, 2016
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