Emerging memory technologies for neuromorphic computing CH Kim, S Lim, SY Woo, WM Kang, YT Seo, ST Lee, S Lee, D Kwon, S Oh, ... Nanotechnology 30 (3), 032001, 2018 | 85 | 2018 |
Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices S Lim, JH Bae, JH Eum, S Lee, CH Kim, D Kwon, BG Park, JH Lee Neural Computing and Applications 31, 8101-8116, 2019 | 81 | 2019 |
On-chip training spiking neural networks using approximated backpropagation with analog synaptic devices D Kwon, S Lim, JH Bae, ST Lee, H Kim, YT Seo, S Oh, J Kim, K Yeom, ... Frontiers in neuroscience 14, 423, 2020 | 51 | 2020 |
High-density and highly-reliable binary neural networks using NAND flash memory cells as synaptic devices ST Lee, H Kim, JH Bae, H Yoo, NY Choi, D Kwon, S Lim, BG Park, JH Lee 2019 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2019 | 44 | 2019 |
Adaptive weight quantization method for nonlinear synaptic devices D Kwon, S Lim, JH Bae, ST Lee, H Kim, CH Kim, BG Park, JH Lee IEEE Transactions on Electron Devices 66 (1), 395-401, 2018 | 39 | 2018 |
Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET W Shin, JH Bae, S Kim, K Lee, D Kwon, BG Park, D Kwon, JH Lee IEEE Electron Device Letters 43 (1), 13-16, 2021 | 35 | 2021 |
Operation scheme of multi-layer neural networks using NAND flash memory as high-density synaptic devices ST Lee, S Lim, NY Choi, JH Bae, D Kwon, BG Park, JH Lee IEEE Journal of the Electron Devices Society 7, 1085-1093, 2019 | 35 | 2019 |
Reconfigurable field-effect transistor as a synaptic device for XNOR binary neural network JH Bae, H Kim, D Kwon, S Lim, ST Lee, BG Park, JH Lee IEEE Electron Device Letters 40 (4), 624-627, 2019 | 35 | 2019 |
Proposition of deposition and bias conditions for optimal signal-to-noise-ratio in resistor-and FET-type gas sensors W Shin, G Jung, S Hong, Y Jeong, J Park, D Kim, D Jang, D Kwon, ... Nanoscale 12 (38), 19768-19775, 2020 | 34 | 2020 |
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ... Nanoscale 14 (6), 2177-2185, 2022 | 25 | 2022 |
Efficient fusion of spiking neural networks and FET-type gas sensors for a fast and reliable artificial olfactory system D Kwon, G Jung, W Shin, Y Jeong, S Hong, S Oh, J Kim, JH Bae, BG Park, ... Sensors and Actuators B: Chemical 345, 130419, 2021 | 24 | 2021 |
Hardware implementation of spiking neural networks using time-to-first-spike encoding S Oh, D Kwon, G Yeom, WM Kang, S Lee, SY Woo, JS Kim, MK Park, ... arXiv preprint arXiv:2006.05033, 2020 | 21 | 2020 |
NAND flash based novel synaptic architecture for highly robust and high-density quantized neural networks with binary neuron activation of (1, 0) ST Lee, D Kwon, H Kim, H Yoo, JH Lee IEEE Access 8, 114330-114339, 2020 | 20 | 2020 |
Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy H Kim, JH Bae, S Lim, ST Lee, YT Seo, D Kwon, BG Park, JH Lee Neurocomputing 378, 189-196, 2020 | 19 | 2020 |
Low-power and reliable gas sensing system based on recurrent neural networks D Kwon, G Jung, W Shin, Y Jeong, S Hong, S Oh, JH Bae, BG Park, ... Sensors and Actuators B: Chemical 340, 129258, 2021 | 18 | 2021 |
3-D AND-type flash memory architecture with high-κ gate dielectric for high-density synaptic devices YT Seo, D Kwon, Y Noh, S Lee, MK Park, SY Woo, BG Park, JH Lee IEEE Transactions on Electron Devices 68 (8), 3801-3806, 2021 | 18 | 2021 |
Highly reliable inference system of neural networks using gated Schottky diodes S Lim, D Kwon, JH Eum, ST Lee, JH Bae, H Kim, CH Kim, BG Park, ... IEEE Journal of the Electron Devices Society 7, 522-528, 2019 | 18 | 2019 |
Low-power and high-density neuron device for simultaneous processing of excitatory and inhibitory signals in neuromorphic systems SY Woo, D Kwon, N Choi, WM Kang, YT Seo, MK Park, JH Bae, BG Park, ... IEEE Access 8, 202639-202647, 2020 | 16 | 2020 |
Investigation of low-frequency noise characteristics of ferroelectric tunnel junction: From conduction mechanism and scaling perspectives W Shin, JH Bae, D Kwon, RH Koo, BG Park, D Kwon, JH Lee IEEE Electron Device Letters 43 (6), 958-961, 2022 | 15 | 2022 |
Hardware-based neural networks using a gated Schottky diode as a synapse device S Lim, JH Bae, JH Eum, S Lee, CH Kim, D Kwon, JH Lee 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 15 | 2018 |