Eu3+ reduction and efficient light emission in Eu2O3 films deposited on Si substrates G Bellocchi, G Franzò, F Iacona, S Boninelli, M Miritello, T Cesca, F Priolo Optics express 20 (5), 5501-5507, 2012 | 32 | 2012 |
New strategies to improve the luminescence efficiency of Eu ions embedded in Si-based matrices S Boninelli, G Bellocchi, G Franzò, M Miritello, F Iacona Journal of Applied Physics 113 (14), 2013 | 27 | 2013 |
SiOC thin films: an efficient light source and an ideal host matrix for Eu2+ ions G Bellocchi, F Iacona, M Miritello, T Cesca, G Franzò Optics Express 21 (17), 20280-20290, 2013 | 25 | 2013 |
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC M Vivona, G Greco, G Bellocchi, L Zumbo, S Di Franco, M Saggio, ... Journal of Physics D: Applied Physics 54 (5), 055101, 2020 | 18 | 2020 |
Barrier height tuning in Ti/4H-SiC Schottky diodes G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, ... Solid-State Electronics 186, 108042, 2021 | 14 | 2021 |
White light emission from Eu-doped SiOC films G Bellocchi, G Franzò, M Miritello, F Iacona Applied Physics Express 7 (1), 012601, 2013 | 13 | 2013 |
Multicolor depth-resolved cathodoluminescence from Eu-doped SiOC thin films G Bellocchi, F Fabbri, M Miritello, F Iacona, G Franzò ACS Applied Materials & Interfaces 7 (33), 18201-18205, 2015 | 10 | 2015 |
Structural and luminescence properties of undoped and Eu-doped SiOC thin films G Bellocchi, G Franzò, S Boninelli, M Miritello, T Cesca, F Iacona, F Priolo IOP Conference Series: Materials Science and Engineering 56 (1), 012009, 2014 | 9 | 2014 |
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures M Vivona, G Bellocchi, RL Nigro, S Rascunà, F Roccaforte Semiconductor Science and Technology 37 (1), 015012, 2021 | 7 | 2021 |
Synthesis and characterization of light emitting Eu2O3 films on Si substrates G Bellocchi, G Franzò, F Iacona, S Boninelli, M Miritello, F Priolo Journal of luminescence 132 (12), 3133-3135, 2012 | 7 | 2012 |
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) M Vivona, F Giannazzo, G Bellocchi, SE Panasci, S Agnello, P Badalà, ... ACS Applied Electronic Materials 4 (9), 4514-4520, 2022 | 3 | 2022 |
Structural and electrical characterization of Ni-based ohmic contacts on 4H-SiC formed by solid-state laser annealing P Badalà, E Smecca, S Rascunà, C Bongiorno, E Carria, A Bassi, ... Materials Science Forum 1062, 417-421, 2022 | 3 | 2022 |
Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiC S Rascuná, G Bellocchi, P Badalá, I Crupi US Patent 11,605,751, 2023 | 2 | 2023 |
Optical and Structural Properties of Europium Oxide Thin Films on Silicon Substrates G Bellocchi, G Franzò, F Iacona, S Boninelli, M Miritello, A Terrasi, ... Nano-Optics for Enhancing Light-Matter Interactions on a Molecular Scale …, 2013 | 2 | 2013 |
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing P Badalà, I Deretzis, S Sanzaro, FM Pennisi, C Bongiorno, G Fisicaro, ... Solid State Phenomena 344, 15-22, 2023 | 1 | 2023 |
Exploring UV-Laser Effects on Al-Implanted 4H-SiC M Vivona, F Giannazzo, G Bellocchi, S Panasci, S Agnello, P Badalà, ... Solid State Phenomena 342, 85-89, 2023 | 1 | 2023 |
Microscopic investigations of advanced thin films for photonics S Boninelli, A Shakoor, K Welma, TF Krauss, L O'Faolain, RL Savio, ... Journal of Physics: Conference Series 471 (1), 012004, 2013 | 1 | 2013 |
Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimization MG Saggio, CM Camalleri, G Bellocchi US Patent App. 18/363,349, 2024 | | 2024 |
DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC DEVICE, AND SiC ELECTRONIC DEVICE A Bassi, G BELLOCCHI US Patent App. 18/309,584, 2023 | | 2023 |
Process for working a wafer of 4h-sic material to form a 3c-sic layer in direct contact with the 4h-sic material G Bellocchi, A Bassi US Patent App. 18/181,415, 2023 | | 2023 |