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Gabriele Bellocchi
Gabriele Bellocchi
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Title
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Year
Eu3+ reduction and efficient light emission in Eu2O3 films deposited on Si substrates
G Bellocchi, G Franzò, F Iacona, S Boninelli, M Miritello, T Cesca, F Priolo
Optics express 20 (5), 5501-5507, 2012
322012
New strategies to improve the luminescence efficiency of Eu ions embedded in Si-based matrices
S Boninelli, G Bellocchi, G Franzò, M Miritello, F Iacona
Journal of Applied Physics 113 (14), 2013
272013
SiOC thin films: an efficient light source and an ideal host matrix for Eu2+ ions
G Bellocchi, F Iacona, M Miritello, T Cesca, G Franzò
Optics Express 21 (17), 20280-20290, 2013
252013
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
M Vivona, G Greco, G Bellocchi, L Zumbo, S Di Franco, M Saggio, ...
Journal of Physics D: Applied Physics 54 (5), 055101, 2020
182020
Barrier height tuning in Ti/4H-SiC Schottky diodes
G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, ...
Solid-State Electronics 186, 108042, 2021
142021
White light emission from Eu-doped SiOC films
G Bellocchi, G Franzò, M Miritello, F Iacona
Applied Physics Express 7 (1), 012601, 2013
132013
Multicolor depth-resolved cathodoluminescence from Eu-doped SiOC thin films
G Bellocchi, F Fabbri, M Miritello, F Iacona, G Franzò
ACS Applied Materials & Interfaces 7 (33), 18201-18205, 2015
102015
Structural and luminescence properties of undoped and Eu-doped SiOC thin films
G Bellocchi, G Franzò, S Boninelli, M Miritello, T Cesca, F Iacona, F Priolo
IOP Conference Series: Materials Science and Engineering 56 (1), 012009, 2014
92014
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures
M Vivona, G Bellocchi, RL Nigro, S Rascunà, F Roccaforte
Semiconductor Science and Technology 37 (1), 015012, 2021
72021
Synthesis and characterization of light emitting Eu2O3 films on Si substrates
G Bellocchi, G Franzò, F Iacona, S Boninelli, M Miritello, F Priolo
Journal of luminescence 132 (12), 3133-3135, 2012
72012
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)
M Vivona, F Giannazzo, G Bellocchi, SE Panasci, S Agnello, P Badalà, ...
ACS Applied Electronic Materials 4 (9), 4514-4520, 2022
32022
Structural and electrical characterization of Ni-based ohmic contacts on 4H-SiC formed by solid-state laser annealing
P Badalà, E Smecca, S Rascunà, C Bongiorno, E Carria, A Bassi, ...
Materials Science Forum 1062, 417-421, 2022
32022
Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiC
S Rascuná, G Bellocchi, P Badalá, I Crupi
US Patent 11,605,751, 2023
22023
Optical and Structural Properties of Europium Oxide Thin Films on Silicon Substrates
G Bellocchi, G Franzò, F Iacona, S Boninelli, M Miritello, A Terrasi, ...
Nano-Optics for Enhancing Light-Matter Interactions on a Molecular Scale …, 2013
22013
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
P Badalà, I Deretzis, S Sanzaro, FM Pennisi, C Bongiorno, G Fisicaro, ...
Solid State Phenomena 344, 15-22, 2023
12023
Exploring UV-Laser Effects on Al-Implanted 4H-SiC
M Vivona, F Giannazzo, G Bellocchi, S Panasci, S Agnello, P Badalà, ...
Solid State Phenomena 342, 85-89, 2023
12023
Microscopic investigations of advanced thin films for photonics
S Boninelli, A Shakoor, K Welma, TF Krauss, L O'Faolain, RL Savio, ...
Journal of Physics: Conference Series 471 (1), 012004, 2013
12013
Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimization
MG Saggio, CM Camalleri, G Bellocchi
US Patent App. 18/363,349, 2024
2024
DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC DEVICE, AND SiC ELECTRONIC DEVICE
A Bassi, G BELLOCCHI
US Patent App. 18/309,584, 2023
2023
Process for working a wafer of 4h-sic material to form a 3c-sic layer in direct contact with the 4h-sic material
G Bellocchi, A Bassi
US Patent App. 18/181,415, 2023
2023
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