| Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate SE Panasci, E Schilirò, G Greco, M Cannas, FM Gelardi, S Agnello, ... ACS Applied Materials & Interfaces 13 (26), 31248-31259, 2021 | 56 | 2021 |
| Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ... ACS applied materials & interfaces 9 (8), 7761-7771, 2017 | 45 | 2017 |
| Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC E Schiliṛ, R Lo Nigro, P Fiorenza, F Roccaforte AIP Advances 6 (7), 2016 | 45 | 2016 |
| Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures F Giannazzo, E Schiliṛ, G Greco, F Roccaforte Nanomaterials 10 (4), 803, 2020 | 41 | 2020 |
| High-performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors F Giannazzo, G Greco, E Schiliṛ, R Lo Nigro, I Deretzis, A La Magna, ... ACS Applied Electronic Materials 1 (11), 2342-2354, 2019 | 36 | 2019 |
| Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy F Giannazzo, M Bosi, F Fabbri, E Schiliṛ, G Greco, F Roccaforte physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900393, 2020 | 35 | 2020 |
| Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers RL Nigro, E Schiliṛ, G Mannino, S Di Franco, F Roccaforte Journal of Crystal Growth 539, 125624, 2020 | 32 | 2020 |
| Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation SE Panasci, E Schiliṛ, F Migliore, M Cannas, FM Gelardi, F Roccaforte, ... Applied Physics Letters 119 (9), 2021 | 31 | 2021 |
| Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schiliṛ, ... Carbon 127, 270-279, 2018 | 31 | 2018 |
| Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide E Schiliṛ, R Lo Nigro, F Roccaforte, I Deretzis, A La Magna, A Armano, ... Advanced Materials Interfaces 6 (10), 1900097, 2019 | 27 | 2019 |
| Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene E Schiliṛ, RL Nigro, SE Panasci, FM Gelardi, S Agnello, R Yakimova, ... Carbon 169, 172-181, 2020 | 25 | 2020 |
| Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy F Giannazzo, I Shtepliuk, IG Ivanov, T Iakimov, A Kakanakova-Georgieva, ... Nanotechnology 30 (28), 284003, 2019 | 25 | 2019 |
| Recent advances in seeded and seed-layer-free atomic layer deposition of high-K dielectrics on graphene for electronics E Schiliṛ, R Lo Nigro, F Roccaforte, F Giannazzo C 5 (3), 53, 2019 | 24 | 2019 |
| Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices R Lo Nigro, P Fiorenza, G Greco, E Schiliṛ, F Roccaforte Materials 15 (3), 830, 2022 | 22 | 2022 |
| Advances in the fabrication of graphene transistors on flexible substrates G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schiliṛ, S Di Franco, ... Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017 | 22 | 2017 |
| Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications RL Nigro, E Schiliṛ, G Greco, P Fiorenza, F Roccaforte Thin Solid Films 601, 68-72, 2016 | 21 | 2016 |
| Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization SE Panasci, A Koos, E Schiliṛ, S Di Franco, G Greco, P Fiorenza, ... Nanomaterials 12 (2), 182, 2022 | 18 | 2022 |
| Atomic layer deposition of high-k insulators on epitaxial graphene: A review F Giannazzo, E Schiliṛ, R Lo Nigro, F Roccaforte, R Yakimova Applied Sciences 10 (7), 2440, 2020 | 18 | 2020 |
| Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions F Giannazzo, SE Panasci, E Schiliṛ, F Roccaforte, A Koos, M Nemeth, ... Advanced Materials Interfaces 9 (22), 2200915, 2022 | 16 | 2022 |
| Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors F Giannazzo, G Fisichella, G Greco, E Schiliṛ, I Deretzis, R Lo Nigro, ... physica status solidi (a) 215 (10), 1700653, 2018 | 16 | 2018 |
