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Sangwan Kim
Sangwan Kim
Department of Electrical and Computer Engineering, Ajou University
Verified email at ajou.ac.kr - Homepage
Title
Cited by
Cited by
Year
Demonstration of L-shaped tunnel field-effect transistors
SW Kim, JH Kim, TJK Liu, WY Choi, BG Park
IEEE transactions on electron devices 63 (4), 1774-1778, 2015
2242015
Design guideline of Si-based L-shaped tunneling field-effect transistors
SW Kim, WY Choi, MC Sun, HW Kim, BG Park
Japanese Journal of Applied Physics 51 (6S), 06FE09, 2012
1232012
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ...
IEEE Electron Device Letters 38 (10), 1379-1382, 2017
742017
Double-gate TFET with vertical channel sandwiched by lightly doped Si
JH Kim, S Kim, BG Park
IEEE Transactions on Electron Devices 66 (4), 1656-1661, 2019
562019
Tunneling field-effect transistor with Si/SiGe material for high current drivability
HW Kim, JH Kim, SW Kim, MC Sun, E Park, BG Park
Japanese Journal of Applied Physics 53 (6S), 06JE12, 2014
382014
Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor
DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, CJ Kim, BG Park
IEEE Transactions on electron devices 58 (4), 1127-1133, 2011
322011
Vertical type double gate tunnelling FETs with thin tunnel barrier
JH Kim, SW Kim, HW Kim, BG Park
Electronics Letters 51 (9), 718-720, 2015
282015
An artificial piezotronic synapse for tactile perception
M Kumar, R Singh, H Kang, S Kim, H Seo
Nano Energy 73, 104756, 2020
252020
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
Y Choi, K Lee, KY Kim, S Kim, J Lee, R Lee, HM Kim, YS Song, S Kim, ...
Solid-State Electronics 164, 107686, 2020
252020
Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method
SW Kim, WY Choi, MC Sun, BG Park
Journal of nanoscience and nanotechnology 13 (9), 6376-6381, 2013
242013
Design and fabrication of asymmetric MOSFETs using a novel self-aligned structure
JP Kim, WY Choi, JY Song, SW Kim, JD Lee, BG Park
IEEE Transactions on Electron Devices 54 (11), 2969-2974, 2007
242007
Effects of localized body doping on switching characteristics of tunnel field-effect transistor (TFET) inverters with vertical structures
DW Kwon, HW Kim, Jang Hyun Kim, E Park, J Lee, W Kim, S Kim, JH Lee, ...
IEEE Transactions on Electron Devices 64 (4), 1799-1805, 2017
23*2017
Hump effects of germanium / silicon heterojunction tunnel field-effect transistors
SW Kim, WY Choi
IEEE Transactions on Electron Devices 63 (6), 2583-2588, 2016
232016
Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology
MC Sun, G Kim, JH Lee, H Kim, SW Kim, HW Kim, JH Lee, H Shin, ...
Microelectronic engineering 110, 141-146, 2013
232013
Scalable embedded Ge-junction vertical-channel tunneling field-effect transistor for low-voltage operation
MC Sun, SW Kim, G Kim, HW Kim, JH Lee, H Shin, BG Park
2010 IEEE Nanotechnology Materials and Devices Conference, 286-290, 2010
222010
Environment-adaptable photonic–electronic-coupled neuromorphic angular visual system
M Kumar, J Lim, S Kim, H Seo
ACS nano 14 (10), 14108-14117, 2020
212020
A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology
AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin
IEEE Electron Device Letters 39 (1), 95-98, 2018
212018
High on-current Ge-channel heterojunction tunnel field-effect transistor using direct band-to-band tunneling
G Kim, J Lee, JH Kim, S Kim
Micromachines 10 (2), 77, 2019
202019
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ...
IEEE Electron Device Letters 40 (9), 1423-1426, 2019
192019
Investigation of electrical characteristic behavior induced by channel-release process in stacked nanosheet gate-all-around MOSFETs
S Kim, M Kim, D Ryu, K Lee, S Kim, J Lee, R Lee, S Kim, JH Lee, BG Park
IEEE Transactions on Electron Devices 67 (6), 2648-2652, 2020
182020
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