| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 173 | 2014 |
| Radiation hardening techniques for Er/Yb doped optical fibers and amplifiers for space application S Girard, M Vivona, A Laurent, B Cadier, C Marcandella, T Robin, ... Optics express 20 (8), 8457-8465, 2012 | 123 | 2012 |
| SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte Applied Physics Letters 103 (15), 2013 | 94 | 2013 |
| Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ... Semiconductor Science and Technology 29 (7), 075018, 2014 | 59 | 2014 |
| Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ... Applied Physics A 115, 333-339, 2014 | 47 | 2014 |
| Design of radiation-hardened rare-earth doped amplifiers through a coupled experiment/simulation approach S Girard, L Mescia, M Vivona, A Laurent, Y Ouerdane, C Marcandella, ... Journal of Lightwave Technology 31 (8), 1247-1254, 2013 | 43 | 2013 |
| Selective doping in silicon carbide power devices F Roccaforte, P Fiorenza, M Vivona, G Greco, F Giannazzo Materials 14 (14), 3923, 2021 | 39 | 2021 |
| Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC M Vivona, G Greco, C Bongiorno, RL Nigro, S Scalese, F Roccaforte Applied Surface Science 420, 331-335, 2017 | 36 | 2017 |
| Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements P Fiorenza, A La Magna, M Vivona, F Roccaforte Applied Physics Letters 109 (1), 2016 | 34 | 2016 |
| Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte Journal of Applied Physics 118 (3), 2015 | 33 | 2015 |
| Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors P Fiorenza, M Vivona, F Iucolano, A Severino, S Lorenti, G Nicotra, ... Materials Science in Semiconductor Processing 78, 38-42, 2018 | 30 | 2018 |
| Influence of Ce codoping and H2 pre-loading on Er/Yb-doped fiber: Radiation response characterized by Confocal Micro-Luminescence M Vivona, S Girard, C Marcandella, T Robin, B Cadier, M Cannas, ... Journal of Non-Crystalline Solids, 2010 | 22 | 2010 |
| Ti/Al‐based contacts to p‐type SiC and GaN for power device applications F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, ... physica status solidi (a) 214 (4), 1600357, 2017 | 20 | 2017 |
| Influence of Codoping on the Photoluminescence Excitation Channels of Phosphosilicate Yb/Er-Doped Glasses M Vivona, S Girard, T Robin, B Cadier, L Vaccaro, M Cannas, ... IEEE Photonics Technology Letters 24 (6), 509-511, 2012 | 19 | 2012 |
| Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC M Vivona, G Greco, G Bellocchi, L Zumbo, S Di Franco, M Saggio, ... Journal of Physics D: Applied Physics 54 (5), 055101, 2020 | 18 | 2020 |
| Metal/semiconductor contacts to silicon carbide: Physics and technology F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Rascunà, ... Materials Science Forum 924, 339-344, 2018 | 16 | 2018 |
| Characterization of SiO2/SiC Interfaces Annealed in N2O or POCl3 P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, S Lorenti, ... Materials Science Forum 778, 623-626, 2014 | 16 | 2014 |
| Barrier height tuning in Ti/4H-SiC Schottky diodes G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, ... Solid-State Electronics 186, 108042, 2021 | 14 | 2021 |
| Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC M Vivona, G ,Greco, M Spera, P Fiorenza, F Giannazzo, A La Magna, ... Journal of Physics D: Applied Physics 54 (44), 445107, 2021 | 14 | 2021 |
| Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering P Fiorenza, M Vivona, S Di Franco, E Smecca, S Sanzaro, A Alberti, ... Materials Science in Semiconductor Processing 93, 290-294, 2019 | 12 | 2019 |
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiVerified email at imm.cnr.it
