| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 2011 | 538 | 2011 |
| A Physical Model of the Temperature Dependence of the Current Through Stacks L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ... IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011 | 268 | 2011 |
| Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker IEEE Transactions on electron devices 62 (6), 1998-2006, 2015 | 220 | 2015 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... 2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010 | 162 | 2010 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 153 | 2011 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 108 | 2011 |
| Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics L Vandelli, A Padovani, L Larcher, G Bersuker IEEE Transactions on Electron Devices 60 (5), 1754-1762, 2013 | 97 | 2013 |
| Random telegraph noise (RTN) in scaled RRAM devices D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ... 2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013 | 90 | 2013 |
| A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014 | 87 | 2014 |
| Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ... 2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011 | 86 | 2011 |
| Microscopic understanding and modeling of HfO2 RRAM device physics L Larcher, A Padovani, O Pirrotta, L Vandelli, G Bersuker 2012 International Electron Devices Meeting, 20.1. 1-20.1. 4, 2012 | 61 | 2012 |
| A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations A Padovani, A Arreghini, L Vandelli, L Larcher, P Pavan, J Van Houdt IEEE transactions on electron devices 58 (9), 3147-3155, 2011 | 38 | 2011 |
| A microscopic physical description of RTN current fluctuations in HfOx RRAM FM Puglisi, P Pavan, L Vandelli, A Padovani, M Bertocchi, L Larcher 2015 IEEE International Reliability Physics Symposium, 5B. 5.1-5B. 5.6, 2015 | 36 | 2015 |
| Modeling the effects of different forming conditions on RRAM conductive filament stability B Butcher, G Bersuker, L Vandelli, A Padovani, L Larcher, A Kalantarian, ... 2013 5th IEEE International Memory Workshop, 52-55, 2013 | 34 | 2013 |
| Modeling of the forming operation in HfO2-based resistive switching memories L Vandelli, A Padovani, G Bersuker, D Gilmer, P Pavan, L Larcher 2011 3rd IEEE International Memory Workshop (IMW), 1-4, 2011 | 33 | 2011 |
| A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- Gate-Stacks L Vandelli, L Larcher, D Veksler, A Padovani, G Bersuker, K Matthews IEEE Transactions on Electron Devices 61 (7), 2287-2293, 2014 | 30 | 2014 |
| A simulation framework for modeling charge transport and degradation in high-k stacks L Larcher, A Padovani, L Vandelli Journal of Computational Electronics 12, 658-665, 2013 | 29 | 2013 |
| Connecting the physical and electrical properties of Hafnia-based RRAM B Butcher, G Bersuker, DC Gilmer, L Larcher, A Padovani, L Vandelli, ... 2013 IEEE International Electron Devices Meeting, 22.2. 1-22.2. 4, 2013 | 27 | 2013 |
| A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction L Vandelli, A Padovani, L Larcher, G Bersuker, J Yum, P Pavan 2011 International Reliability Physics Symposium, GD. 5.1-GD. 5.4, 2011 | 24 | 2011 |
| A New Physical Method Based on–Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-/III-V MOSFETs G Sereni, L Vandelli, D Veksler, L Larcher IEEE Transactions on Electron Devices 62 (3), 705-712, 2015 | 21 | 2015 |
Andrea PadovaniAssistant Professor, università degli Studi di Modena e Reggio EmiliaVerified email at unimore.it
