‪Mohd Sahid‬ - ‪Google Scholar‬

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2022202320248 8 4

Co-authors

Erfan AbbasianBabol Noshirvani University of TechnologyVerified email at nit.ac.ir
ADIL ZAIDIMEWAT ENGINEERING COLLEGE , NUHVerified email at mecw.ac.in
Mehrzad KaramimaneshShiraz university of technologyVerified email at sutech.ac.ir
Morteza GholipourBabol Noshirvani University of TechnologyVerified email at nit.ac.ir

Mohd Sahid

Mohd Sahid

Mewat Engineering Collage

Verified email at mecw.ac.in - Homepage

Low Power Circuit SRAM VLSI Nanotechnology


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A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology E Abbasian, E Mani, M Gholipour, M Karamimanesh, M Sahid, A Zaidi Circuits, Systems, and Signal Processing 41 (6), 3081-3105, 2022	21	2022
Carbon-MOSFET Based Ternary Logic Gates at 32 nm Channel Length: An Exploration ZAA Adil Zaidi, Mujeev Khan, Mohd Saib, Mohd Sahid, Shaheen Khan, M. Nizamuddin Design Engineering 2021 (09), 2021		2021

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