| Buckled two-dimensional Xene sheets A Molle, J Goldberger, M Houssa, Y Xu, SC Zhang, D Akinwande Nature materials 16 (2), 163-169, 2017 | 745 | 2017 |
| Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 E Scalise, M Houssa, G Pourtois, V Afanas’ ev, A Stesmans Nano Research 5, 43-48, 2012 | 743 | 2012 |
| Electronic properties of hydrogenated silicene and germanene M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 98 (22), 2011 | 492 | 2011 |
| Trap-assisted tunneling in high permittivity gate dielectric stacks M Houssa, M Tuominen, M Naili, V Afanas’ ev, A Stesmans, S Haukka, ... Journal of Applied Physics 87 (12), 8615-8620, 2000 | 443 | 2000 |
| High k gate dielectrics M Houssa CRC Press, 2003 | 415 | 2003 |
| Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface D Chiappe, E Scalise, E Cinquanta, C Grazianetti, B van den Broek, ... Advanced Materials 26 (13), 2096-2101, 2014 | 368 | 2014 |
| Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ... Applied physics letters 91 (8), 2007 | 345 | 2007 |
| Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ... Journal of The Electrochemical Society 155 (7), H552, 2008 | 341 | 2008 |
| Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ... Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006 | 328 | 2006 |
| Variation in the fixed charge density of gate dielectric stacks during postdeposition oxidation M Houssa, VV Afanas’ ev, A Stesmans, MM Heyns Applied Physics Letters 77 (12), 1885-1887, 2000 | 276 | 2000 |
| Can silicon behave like graphene? A first-principles study M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 97 (11), 2010 | 264 | 2010 |
| Silicene: a review of recent experimental and theoretical investigations M Houssa, A Dimoulas, A Molle Journal of Physics: Condensed Matter 27 (25), 253002, 2015 | 246 | 2015 |
| Band alignments in metal–oxide–silicon structures with atomic-layer deposited and VV Afanas’ ev, M Houssa, A Stesmans, MM Heyns Journal of applied physics 91 (5), 3079-3084, 2002 | 241 | 2002 |
| Polarity effect on the temperature dependence of leakage current through gate dielectric stacks Z Xu, M Houssa, S De Gendt, M Heyns Applied physics letters 80 (11), 1975-1977, 2002 | 214 | 2002 |
| Getting through the Nature of Silicene: An sp2–sp3 Two-Dimensional Silicon Nanosheet E Cinquanta, E Scalise, D Chiappe, C Grazianetti, B van den Broek, ... The Journal of Physical Chemistry C 117 (32), 16719-16724, 2013 | 204 | 2013 |
| Electron energy barriers between (100)Si and ultrathin stacks of and insulators VV Afanas’ ev, M Houssa, A Stesmans, MM Heyns Applied Physics Letters 78 (20), 3073-3075, 2001 | 194 | 2001 |
| HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ... Applied Physics Letters 86 (3), 2005 | 185 | 2005 |
| Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ... Journal of the Electrochemical Society 155 (2), G33, 2007 | 158 | 2007 |
| Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown M Houssa, T Nigam, PW Mertens, MM Heyns Journal of Applied Physics 84 (8), 4351-4355, 1998 | 155 | 1998 |
| Electronic properties of two-dimensional hexagonal germanium M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 96 (8), 2010 | 152 | 2010 |
