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Venkatesh Narayanamurti
Venkatesh Narayanamurti
Professor of Technology and Public Policy, Harvard University
Verified email at seas.harvard.edu - Homepage
Title
Cited by
Cited by
Year
Direct measurement of quasiparticle-lifetime broadening in a strong-coupled superconductor
RC Dynes, V Narayanamurti, JP Garno
Physical Review Letters 41 (21), 1509, 1978
14861978
Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures
RG Mani, JH Smet, K von Klitzing, V Narayanamurti, WB Johnson, ...
Nature 420 (6916), 646-650, 2002
8752002
Size-dependent surface luminescence in ZnO nanowires
I Shalish, H Temkin, V Narayanamurti
Physical Review B 69 (24), 245401, 2004
7752004
Tunneling states of defects in solids
V Narayanamurti, RO Pohl
Reviews of Modern Physics 42 (2), 201, 1970
5481970
Continuous and discontinuous semiconductor-metal transition in samarium monochalcogenides under pressure
A Jayaraman, V Narayanamurti, E Bucher, RG Maines
Physical Review Letters 25 (20), 1430, 1970
4971970
Heterostructure integrated thermionic coolers
A Shakouri, JE Bowers
Applied Physics Letters 71 (9), 1234-1236, 1997
4651997
Selective transmission of high-frequency phonons by a superlattice: the" dielectric" phonon filter
V Narayanamurti, HL Störmer, MA Chin, AC Gossard, W Wiegmann
Physical Review Letters 43 (27), 2012, 1979
4301979
Observation of second sound in bismuth
V Narayanamurti, RC Dynes
Physical Review Letters 28 (22), 1461, 1972
4101972
Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on sapphire by metalorganic chemical vapor deposition
PJ Hansen, YE Strausser, AN Erickson, EJ Tarsa, P Kozodoy, EG Brazel, ...
Applied Physics Letters 72 (18), 2247-2249, 1998
3561998
Density of states and de haas—van alphen effect in two-dimensional electron systems
JP Eisenstein, HL Stormer, V Narayanamurti, AY Cho, AC Gossard, ...
Physical review letters 55 (8), 875, 1985
3531985
Water consumption of energy resource extraction, processing, and conversion
E Mielke, LD Anadon, V Narayanamurti
Belfer Center for Science and International Affairs, 2010
3112010
Demonstration of a -Cycle Phase Shift in the Radiation-Induced Oscillatory Magnetoresistance in Devices
RG Mani, JH Smet, K Von Klitzing, V Narayanamurti, WB Johnson, ...
Physical review letters 92 (14), 146801, 2004
2192004
Effect of inversion symmetry on the band structure of semiconductor heterostructures
JP Eisenstein, HL Störmer, V Narayanamurti, AC Gossard, W Wiegmann
Physical review letters 53 (27), 2579, 1984
2161984
Rotational degrees of freedom of molecules in solids. I. The cyanide ion in alkali halides
WD Seward, V Narayanamurti
Physical Review 148 (1), 463, 1966
2061966
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
D Ruzmetov, G Gopalakrishnan, C Ko, V Narayanamurti, S Ramanathan
Journal of Applied Physics 107 (11), 2010
1992010
Spin polarized tunneling at finite bias
SO Valenzuela, DJ Monsma, CM Marcus, V Narayanamurti, M Tinkham
Physical review letters 94 (19), 196601, 2005
1902005
Direct observation of localized high current densities in GaN films
EG Brazel, MA Chin, V Narayanamurti
Applied physics letters 74 (16), 2367-2369, 1999
1771999
Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition
D Ruzmetov, D Heiman, BB Claflin, V Narayanamurti, S Ramanathan
Physical Review B 79 (15), 153107, 2009
1692009
Structure-functional property relationships in rf-sputtered vanadium dioxide thin films
D Ruzmetov, KT Zawilski, V Narayanamurti, S Ramanathan
Journal of Applied Physics 102 (11), 2007
1592007
Pressure-Induced Metal-Semiconductor Transition and Electron Delocalization in Sm Te
A Jayaraman, V Narayanamurti, E Bucher, RG Maines
Physical Review Letters 25 (6), 368, 1970
1551970
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