| Implementation of simple but powerful trilayer oxide-based artificial synapses with a tailored bio-synapse-like structure H Zhang, X Ju, KS Yew, DS Ang ACS applied materials & interfaces 12 (1), 1036-1045, 2019 | 29 | 2019 |
| Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook J Kim, X Ju, KW Ang, D Chi ACS nano 17 (3), 1831-1844, 2023 | 26 | 2023 |
| Realization of self-compliance resistive switching memory via tailoring interfacial oxygen H Zhang, X Ju, Y Zhou, C Gu, J Pan, DS Ang ACS applied materials & interfaces 11 (44), 41490-41496, 2019 | 18 | 2019 |
| Inkjet‐Printed Xerogel Scaffolds Enabled Room‐Temperature Fabrication of High‐Quality Metal Electrodes for Flexible Electronics S Wang, Y Gao, Q Huang, X Guo, A Yang, Y Zhang, Q Zhuang, D Chen, ... Advanced Functional Materials 32 (33), 2203730, 2022 | 10 | 2022 |
| Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO x gate dielectric Y Li, T Chen, X Ju, T Salim Nanoscale 14 (28), 10245-10254, 2022 | 9 | 2022 |
| Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era J Li, H Abbas, DS Ang, A Ali, X Ju Nanoscale Horizons, 2023 | 8 | 2023 |
| Homogeneous in-plane WSe 2 P–N junctions for advanced optoelectronic devices D Yue, X Ju, T Hu, X Rong, X Liu, X Liu, HK Ng, D Chi, X Wang, J Wu Nanoscale 15 (10), 4940-4950, 2023 | 7 | 2023 |
| The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping C Gu, C Zhou, DS Ang, X Ju, R Gu, T Duan Journal of Applied Physics 125 (2), 2019 | 6 | 2019 |
| InP Quantum Dots Tailored Oxide Thin Film Phototransistor for Bioinspired Visual Adaptation Z Gao, X Ju, H Zhang, X Liu, H Chen, W Li, H Zhang, L Liang, H Cao Advanced Functional Materials 33 (52), 2305959, 2023 | 5 | 2023 |
| Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor X Ju, DS Ang IEEE Access 8, 14048-14053, 2020 | 4 | 2020 |
| A neuromorphic bionic eye with broadband vision and biocompatibility using TIPS-pentacene-based phototransistor array retina H Zhang, X Ju, D Chi, L Feng, Z Liu, K Yew, M Zhu, T Li, R Wei, S Wang, ... Applied Materials Today 33, 101885, 2023 | 3 | 2023 |
| Response of switching hole traps in the small-area P-MOSFET under channel hot-hole effect X Ju, DS Ang 2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019 | 3 | 2019 |
| Estimation of threshold voltage shift in a-IGZO TFTs under different bias temperature stress by improved stretched-exponential equation X Ju, X Xiao, Y Xiao, S Zhang 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and …, 2016 | 3 | 2016 |
| Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials F Yang, HK Ng, X Ju, W Cai, J Cao, D Chi, A Suwardi, G Hu, Z Ni, ... Advanced Functional Materials, 2310438, 2024 | 1 | 2024 |
| In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfOx-Based Neuristor Array H Zhang, P Qiu, Y Lu, X Ju, D Chi, KS Yew, M Zhu, S Wang, R Wei, W Hu ACS sensors 8 (10), 3873-3881, 2023 | 1 | 2023 |
| Time Evolution Study of Two-Step Plasma-Treated Copper-Copper Direct Bonding in Ambient L Hu, YD Lim, P Zhao, MJZ Lim, W Miao, X Ju, CS Tan 2023 International Conference on Electronics Packaging (ICEP), 45-46, 2023 | 1 | 2023 |
| Synapse and tunable leaky-integrate neuron functions enabled by oxide trapping dynamics in a single logic transistor X Ju, DS Ang IEEE Electron Device Letters 43 (5), 793-796, 2022 | 1 | 2022 |
| Impact of channel hot-hole stressing on gate-oxide trap’s emission X Ju, DS Ang, C Gu IEEE Transactions on Electron Devices 67 (11), 4720-4727, 2020 | 1 | 2020 |
| Oxygen partial pressure and annealing temperature influence on the performance of back-channel-etch zinc tin oxide thin film transistors Y Xiao, X Xiao, L Zhang, X Ju, H Lu, S Zhang 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and …, 2016 | 1 | 2016 |
| Implementation of High Thermal Conductivity and Synaptic Metaplasticity in Vertically-Aligned Hexagonal Boron Nitride-Based Memristor H Zhang, X Ju, H Jiang, D Yang, R Wei, W Hu, X Lu, and M Zhu Science China Materials, 2024 | | 2024 |
Diing Shenp ANGNanyang Technological University, SingaporeVerified email at ntu.edu.sg
