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Guoyun GAO
Guoyun GAO
Beijing Institute of Nanoenergy and Nanosystems, CAS. The University Hong Kong
Verified email at hku.hk
Title
Cited by
Cited by
Year
Bioinspired mechano-photonic artificial synapse based on graphene/MoS2 heterostructure
J Yu, X Yang, G Gao, Y Xiong, Y Wang, J Han, Y Chen, H Zhang, Q Sun, ...
Science Advances 7 (12), eabd9117, 2021
2082021
Flexible Photodetector Arrays Based on Patterned CH3NH3PbI3−xClx Perovskite Film for Real‐Time Photosensing and Imaging
W Wu, X Wang, X Han, Z Yang, G Gao, Y Zhang, J Hu, Y Tan, A Pan, ...
Advanced Materials 31 (3), 1805913, 2019
1992019
Piezotronic graphene artificial sensory synapse
Y Chen, G Gao, J Zhao, H Zhang, J Yu, X Yang, Q Zhang, W Zhang, S Xu, ...
Advanced Functional Materials 29 (41), 1900959, 2019
1692019
p‐Type MoS2 and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect
F Xue, L Chen, J Chen, J Liu, L Wang, M Chen, Y Pang, X Yang, G Gao, ...
Advanced Materials 28 (17), 3391-3398, 2016
1592016
A flexible p-CuO/n-MoS 2 heterojunction photodetector with enhanced photoresponse by the piezo-phototronic effect
K Zhang, M Peng, W Wu, J Guo, G Gao, Y Liu, J Kou, R Wen, Y Lei, A Yu, ...
Materials Horizons 4 (2), 274-280, 2017
1442017
Contact-electrification-activated artificial afferents at femtojoule energy
J Yu, G Gao, J Huang, X Yang, J Han, H Zhang, Y Chen, C Zhao, Q Sun, ...
Nature communications 12 (1), 1581, 2021
1372021
Tunable Tribotronic Dual‐Gate Logic Devices Based on 2D MoS2 and Black Phosphorus
G Gao, B Wan, X Liu, Q Sun, X Yang, L Wang, C Pan, ZL Wang
Advanced Materials 30 (13), 1705088, 2018
1152018
Mechanoplastic tribotronic floating‐gate neuromorphic transistor
X Yang, J Yu, J Zhao, Y Chen, G Gao, Y Wang, Q Sun, ZL Wang
Advanced Functional Materials 30 (34), 2002506, 2020
1042020
MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit
X Liu, R Liang, G Gao, C Pan, C Jiang, Q Xu, J Luo, X Zou, Z Yang, L Liao, ...
Advanced Materials 30 (28), 1800932, 2018
1032018
Triboiontronic Transistor of MoS2
G Gao, J Yu, X Yang, Y Pang, J Zhao, C Pan, Q Sun, ZL Wang
Advanced Materials 31 (7), 1806905, 2019
962019
Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires
X Liu, X Yang, G Gao, Z Yang, H Liu, Q Li, Z Lou, G Shen, L Liao, C Pan, ...
ACS nano 10 (8), 7451-7457, 2016
882016
Ultrathin piezotronic transistors with 2 nm channel lengths
L Wang, S Liu, G Gao, Y Pang, X Yin, X Feng, L Zhu, Y Bai, L Chen, ...
ACS nano 12 (5), 4903-4908, 2018
692018
Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Q Hua, G Gao, C Jiang, J Yu, J Sun, T Zhang, B Gao, W Cheng, R Liang, ...
Nature communications 11 (1), 6207, 2020
642020
Bioinspired interactive neuromorphic devices
J Yu, Y Wang, S Qin, G Gao, C Xu, ZL Wang, Q Sun
Materials Today 60, 158-182, 2022
592022
Recent advances in large‐scale tactile sensor arrays based on a transistor matrix
Z Huo, Y Peng, Y Zhang, G Gao, B Wan, W Wu, Z Yang, X Wang, C Pan
Advanced Materials Interfaces 5 (21), 1801061, 2018
502018
Ion gel capacitively coupled tribotronic gating for multiparameter distance sensing
H Zhang, J Yu, X Yang, G Gao, S Qin, J Sun, M Ding, C Jia, Q Sun, ...
ACS nano 14 (3), 3461-3468, 2020
462020
Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS2 Field-Effect Transistor
J Zhao, Z Wei, Q Zhang, H Yu, S Wang, X Yang, G Gao, S Qin, G Zhang, ...
ACS nano 13 (1), 582-590, 2018
402018
Coupled ion‐gel channel‐width gating and piezotronic interface gating in ZnO nanowire devices
X Yang, G Hu, G Gao, X Chen, J Sun, B Wan, Q Zhang, S Qin, W Zhang, ...
Advanced Functional Materials 29 (41), 1807837, 2019
372019
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
P Yang, J Zha, G Gao, L Zheng, H Huang, Y Xia, S Xu, T Xiong, Z Zhang, ...
Nano-micro letters 14 (1), 109, 2022
342022
CuS nanotrough-networks for highly stable transparent conducting electrodes
X Zhang, W Guo, G Gao, M Que, C Pan, ZL Wang
Journal of Materials Chemistry C 4 (21), 4733-4739, 2016
202016
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