| Full-swing a-IGZO inverter with a depletion load using negative bias instability under light illumination IT Cho, JW Lee, JM Park, WS Cheong, CS Hwang, JS Kwak, IH Cho, ... IEEE electron device letters 33 (12), 1726-1728, 2012 | 30 | 2012 |
| High-Density Reconfigurable Devices with Programmable Bottom-Gate Array JHL Jun-Mo Park, Jong-Ho Bae, Jai-Ho Eum, Sung-Hun Jin, Byung-Gook Park IEEE Electron Device Letters, 2017 | 13 | 2017 |
| Elimination of the gate and drain bias stresses in I–V characteristics of WSe2 FETs by using dual channel pulse measurement JHL Jun-Mo Park, In-Tak Cho, Won-Mook Kang, Byung-Gook Park Applied Physics Letters 109 (5), 053503, 2016 | 11 | 2016 |
| Pulsed I–V measurement method to obtain hysteresis-free characteristics of graphene FETs JM Park, D Lee, J Shim, T Jeon, K Eom, BG Park, JH Lee Semiconductor Science and Technology 29 (9), 095006, 2014 | 9 | 2014 |
| 3-D simulation of nanopore structure for DNA sequencing JM Park, YE Pak, H Chun, JH Lee Journal of Nanoscience and Nanotechnology 12 (7), 5160-5163, 2012 | 7 | 2012 |
| Comparison of DC, Fast IV, and Pulsed IV measurement method in multi-layer WSe2 field effect transistors JHL Jun-Mo Park, In-Tak Cho, Won-Mook Kang, Byung-Gook Park International Conference on Electronics, Information, and Communication …, 2016 | 1* | 2016 |
| Analysis and suppression of drain current drift in graphene FETs JM Park, D Lee, J Shim, T Jeon, K Eom, BG Park, JH Lee Semiconductor Science and Technology 30 (10), 105013, 2015 | 1 | 2015 |
| Parameter Modeling for Nanopore Ionic Field Effect Transistors in 3-D Device Simulation JM Park, H Chun, YE Pak, BG Park, JH Lee Journal of Nanoscience and Nanotechnology 14 (11), 8171-8175, 2014 | 1 | 2014 |
| Effect of displacement current on current-voltage characteristics in electrolyte-gated graphene FETs JM Park, JH Lee 2014 International Conference on Electronics, Information and Communications …, 2014 | 1 | 2014 |
| Method to Eliminate Gate and Drain Bias Stresses in Transfer Curves of WSe2 Field Effect Transistors with Single Channel Pulsed I–V Measurement JM Park, IT Cho, WM Kang, BG Park, JH Lee Journal of Nanoscience and Nanotechnology 17 (5), 3382-3385, 2017 | | 2017 |
| Analysis on Base Voltage Effect of Pulsed Current-Voltage Measurement to Suppress Dirac Point Shift and Drift of Drain Current in Graphene FETs JM Park, JH Lee | | |
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
