| Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts Ş Karataş, Ş Altındal, A Türüt, A Özmen Applied surface science 217 (1-4), 250-260, 2003 | 308 | 2003 |
| Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs A Gümüş, A Türüt, N Yalcin Journal of Applied Physics 91 (1), 245-250, 2002 | 273 | 2002 |
| The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO 3 and LaCr 0.90 Ir 0.10 O 3 perovskites M Coşkun, Ö Polat, FM Coşkun, Z Durmuş, M Çağlar, A Türüt RSC advances 8 (9), 4634-4648, 2018 | 210 | 2018 |
| Electrical characterization of Au/n-ZnO Schottky contacts on n-Si Ş Aydoğan, K Çınar, H Asıl, C Coşkun, A Türüt Journal of Alloys and Compounds 476 (1-2), 913-918, 2009 | 208 | 2009 |
| Interpreting the nonideal reverse bias CV characteristics and importance of the dependence of Schottky barrier height on applied voltage A Turut, M Saglam, H Efeoglu, N Yalcin, M Yildirim, B Abay Physica B: Condensed Matter 205 (1), 41-50, 1995 | 202 | 1995 |
| Fabrication and electrical characteristics of Schottky diode based on organic material Ö Güllü, Ş Aydoğan, A Türüt Microelectronic Engineering 85 (7), 1647-1651, 2008 | 188 | 2008 |
| Parameter extraction from non-ideal C− V characteristics of a Schottky diode with and without interfacial layer A Türüt, N Yalçin, M Saǧlam Solid-state electronics 35 (6), 835-841, 1992 | 183 | 1992 |
| Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements Ş Karataş, Ş Altındal, A Türüt, M Çakar Physica B: Condensed Matter 392 (1-2), 43-50, 2007 | 146 | 2007 |
| The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts ME Aydın, A Türüt Microelectronic Engineering 84 (12), 2875-2882, 2007 | 142 | 2007 |
| The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy Ş Karataş, A Türüt Vacuum 74 (1), 45-53, 2004 | 137 | 2004 |
| On temperature-dependent experimental IV and CV data of Ni/n-GaN Schottky contacts N Yıldırım, K Ejderha, A Turut Journal of Applied Physics 108 (11), 2010 | 128 | 2010 |
| On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature Ş Aydoğan, M Sağlam, A Türüt Applied surface science 250 (1-4), 43-49, 2005 | 128 | 2005 |
| Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures A Turut, A Karabulut, K Ejderha, N Bıyıklı Materials Science in Semiconductor Processing 39, 400-407, 2015 | 125 | 2015 |
| Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕ n-Si and Sn/rhodamine-101∕ p-Si Schottky barrier diodes M Çakar, N Yıldırım, Ş Karataş, C Temirci, A Türüt Journal of applied physics 100 (7), 2006 | 119 | 2006 |
| The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect A Türüt, B Bati, A Kökçe, M Sağlam, N Yalçin Physica Scripta 53 (1), 118, 1996 | 117 | 1996 |
| Determination of the density of Si-metal interface states and excess capacitance caused by them A Türüt, M Saǧlam Physica B: Condensed Matter 179 (4), 285-294, 1992 | 116 | 1992 |
| Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures Ş Aydoğan, M Sağlam, A Türüt Microelectronic Engineering 85 (2), 278-283, 2008 | 112 | 2008 |
| The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices M Çakar, Y Onganer, A Türüt Synthetic Metals 126 (2-3), 213-218, 2002 | 112 | 2002 |
| Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts ME Aydın, N Yıldırım, A Türüt Journal of applied physics 102 (4), 2007 | 108 | 2007 |
| The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I–V–T characteristics AF Özdemir, A Turut, A Kökçe Semiconductor science and technology 21 (3), 298, 2006 | 107 | 2006 |
