Paul Ho
Paul Ho
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Electromigration in metals
PS Ho, T Kwok
Reports on Progress in Physics 52 (3), 301, 1989
Low dielectric constant materials for ULSI interconnects
M Morgen, ET Ryan, JH Zhao, C Hu, T Cho, PS Ho
Annual Review of Materials Science 30 (1), 645-680, 2000
Thin films-interdiffusion and reactions
KN Tu, JW Mayer, JM Poate
Wiley, New York, 1978
Electromigration reliability issues in dual-damascene Cu interconnections
ET Ogawa, KD Lee, VA Blaschke, PS Ho
IEEE Transactions on reliability 51 (4), 403-419, 2002
Low-dielectric-constant materials for ULSI interlayer-dielectric applications
WW Lee, PS Ho
MRS bulletin 22 (10), 19-27, 1997
Plasma processing of low-k dielectrics
MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ...
Journal of Applied Physics 113 (4), 4, 2013
Chemical bonding and reaction at metal/polymer interfaces
PS Ho, PO Hahn, JW Bartha, GW Rubloff, FK LeGoues, BD Silverman
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985
Auger study of preferred sputtering on binary alloy surfaces
PS Ho, JE Lewis, HS Wildman, JK Howard
Surface Science 57 (1), 393-405, 1976
Numerical study on influences of barrier arrangements on dielectric barrier discharge characteristics
WS Kang, JM Park, Y Kim, SH Hong
IEEE Transactions on Plasma Science 31 (4), 504-510, 2003
Impact of near-surface thermal stresses on interfacial reliability of through-silicon vias for 3-D interconnects
SK Ryu, KH Lu, X Zhang, JH Im, PS Ho, R Huang
IEEE Transactions on Device and Materials Reliability 11 (1), 35-43, 2010
Thermo-mechanical reliability of 3-D ICs containing through silicon vias
KH Lu, X Zhang, SK Ryu, J Im, R Huang, PS Ho
2009 59th Electronic Components and Technology Conference, 630-634, 2009
Electromigration in Al (Cu) two‐level structures: Effect of Cu and kinetics of damage formation
CK Hu, MB Small, PS Ho
Journal of applied physics 74 (2), 969-978, 1993
Complex formation and growth at the Cr–and Cu–polyimide interface
R Haight, RC White, BD Silverman, PS Ho
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (4 …, 1988
Investigation of diffusion and electromigration parameters for Cu–Sn intermetallic compounds in Pb-free solders using simulated annealing
B Chao, SH Chae, X Zhang, KH Lu, J Im, PS Ho
Acta Materialia 55 (8), 2805-2814, 2007
Equilibrium structures of Si (100) stepped surfaces
TW Poon, S Yip, PS Ho, FF Abraham
Physical review letters 65 (17), 2161, 1990
Effects of enhanced diffusion on preferred sputtering of homogeneous alloy surfaces
Surface Science 72 (2), 253-263, 1978
Motion of inclusion induced by a direct current and a temperature gradient
Journal of Applied Physics 41 (1), 64-68, 1970
Intermetallic compounds of Al and transitions metals: Effect of electromigration in 1–2‐μm‐wide lines
JK Howard, JF White, PS Ho
Journal of Applied Physics 49 (7), 4083-4093, 1978
Chemical bonding and electronic structure of Si
PS Ho, GW Rubloff, JE Lewis, VL Moruzzi, AR Williams
Physical Review B 22 (10), 4784, 1980
Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si (111)
M Liehr, PE Schmid, FK LeGoues, PS Ho
Physical review letters 54 (19), 2139, 1985
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