Filippo Giannazzo
Filippo Giannazzo
CNR, Istituto per la Microelettronica e i Microsistemi
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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ...
Microelectronic Engineering 187, 66-77, 2018
Ion irradiation and defect formation in single layer graphene
G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini
Carbon 47 (14), 3201-3207, 2009
Barrier inhomogeneity and electrical properties of Schottky contacts
F Iucolano, F Roccaforte, F Giannazzo, V Raineri
Journal of Applied Physics 102 (11), 113701, 2007
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum
I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, N Sakai, ...
Applied Physics Letters 106 (13), 131904, 2015
Recent advances on dielectrics technology for SiC and GaN power devices
F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...
Applied Surface Science 301, 9-18, 2014
Screening length and quantum capacitance in graphene by scanning probe microscopy
F Giannazzo, S Sonde, V Raineri, E Rimini
Nano letters 9 (1), 23-29, 2009
Anchoring molecular magnets on the Si (100) surface
GG Condorelli, A Motta, IL FragalÓ, F Giannazzo, V Raineri, A Caneschi, ...
Angewandte Chemie International Edition 43 (31), 4081-4084, 2004
Electrical properties of the graphene/4 H-SiC (0001) interface probed by scanning current spectroscopy
S Sonde, F Giannazzo, V Raineri, R Yakimova, JR Huntzinger, A Tiberj, ...
Physical Review B 80 (24), 241406, 2009
Mapping the density of scattering centers limiting the electron mean free path in graphene
F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri
Nano letters 11 (11), 4612-4618, 2011
Surface and interface issues in wide band gap semiconductor electronics
F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri
Applied Surface Science 256 (19), 5727-5735, 2010
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
F Giannazzo, I Deretzis, A La Magna, F Roccaforte, R Yakimova
Physical Review B 86 (23), 235422, 2012
Challenges for energy efficient wide band gap semiconductor power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ...
physica status solidi (a) 211 (9), 2063-2071, 2014
XPS and AFM characterization of the enzyme glucose oxidase immobilized on SiO2 surfaces
S Libertino, F Giannazzo, V Aiello, A Scandurra, F Sinatra, M Renis, ...
Langmuir 24 (5), 1965-1972, 2008
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte
Applied Physics Letters 103 (15), 153508, 2013
Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy
G Nicotra, QM Ramasse, I Deretzis, A La Magna, C Spinella, F Giannazzo
Acs Nano 7 (4), 3045-3052, 2013
Nanoscale carrier transport in Ohmic contacts on AlGaN epilayers grown on Si(111)
F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri
Applied physics letters 89 (2), 022103, 2006
Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum
A Alberti, I Deretzis, G Pellegrino, C Bongiorno, E Smecca, G Mannino, ...
ChemPhysChem 16 (14), 3064-3071, 2015
Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature
A Frazzetto, F Giannazzo, RL Nigro, V Raineri, F Roccaforte
Journal of Physics D: Applied Physics 44 (25), 255302, 2011
Nanoscale transport properties at silicon carbide interfaces
F Roccaforte, F Giannazzo, V Raineri
Journal of Physics D: Applied Physics 43 (22), 223001, 2010
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte
Applied Physics Letters 99 (7), 072117, 2011
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